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Diodes Inc. Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes - DMG6402LVT-7

DIODES INC. . DMG6402LVT-7

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Attributes

Brand name, Manufacturer nameDIODES INC.
ManufacturerDIODES INC. Diodes Incorporated
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameDiodes Inc. Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes - DMG6402LVT-7
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple5
MPN, Part Number, PartNumberDMG6402LVT-7
qtyInStock8390
SKU88AH8621
tierMinQty11
tierMinQty210
tierMinQty325
tierMinQty450
tierMinQty5100
tierMinQty6250
tierMinQty7, Case, PackageQuantity, Size500
tierMinQty81000
tierPrice10.418
tierPrice20.299
tierPrice30.251
tierPrice40.204
tierPrice50.156
tierPrice60.148
tierPrice70.14
tierPrice80.111
urlhttps://www.newark.com/88AH8621?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
AsinB00LVMJTIA
Brand, Label, Man, Publisher, StudioDiodes Incorporated
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 621-DMG6402LVT-7 X500
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 6 A Drain-Source On Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOT-26-6 Packaging: Reel Fall Time: 2.8 ns Gate Charge Qg: 11.4 nC
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
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RS Delivers827-05251295011 @ $0.32
Allied Electronics7055089425050
Digi-Key4251591111 @ $0.48, 10 @ $0.36, 100 @ $0.23, 500 @ $0.16, 1000 @ $0.12
Win SourceDMG6402LVT-711274291
HotendaH18154071126011 @ $0.38, 10 @ $0.28, 100 @ $0.18, 500 @ $0.12
Future Electronics9050065300030003000 @ $0.06, 6000 @ $0.05

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MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A (500 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 6 A Drain-Source On Resistance: 30 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOT-26-6 Packaging: Reel Fall Time: 2.8 ns Gate Charge Qg: 11.4 nC
CategoryIndustrial & Scientific
MPNDMG6402LVT-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
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