INFINEON TECHNOLOGIES IPU80R1K4CEBKMA1 | Transistor: N-MOSFET; unipolar; 800V; 3.9A; 63W; IPAK
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| IPU80R1K4CEBKMA1 | 1 | 1 | |||
| Digi-Key | 4897534 | 1 | 20500 | 1 | 901 @ $0.40 |
| Hotenda | H1820770 | 1 | 1 |
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MOSFET N-CH 800V 3.9A TO251-3 (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Tube <b>Series:</b> CoolMOS\xc3\xa2\xe2\u20ac\u017e\xc2\xa2 <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Standard <b>Drain to Source Voltage (Vdss):</b> 800V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 3.9A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 1.4 Ohm @ 2.3A, 10V <b>Vgs(th) (Max) @ Id:</b> 3.9V @ 240\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 23nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 570pF @ 100V <b>Power - Max:</b> 63W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPU80R1K4CEBKMA1 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-CH 800V 3.9A TO251-3 (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Tube <b>Series:</b> CoolMOS\xc3\xa2\xe2\u20ac\u017e\xc2\xa2 <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Standard <b>Drain to Source Voltage (Vdss):</b> 800V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 3.9A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 1.4 Ohm @ 2.3A, 10V <b>Vgs(th) (Max) @ Id:</b> 3.9V @ 240\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 23nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 570pF @ 100V <b>Power - Max:</b> 63W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPU80R1K4CEBKMA1 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-CH 800V 3.9A TO251-3 (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Tube <b>Series:</b> CoolMOS\xc3\xa2\xe2\u20ac\u017e\xc2\xa2 <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Standard <b>Drain to Source Voltage (Vdss):</b> 800V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 3.9A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 1.4 Ohm @ 2.3A, 10V <b>Vgs(th) (Max) @ Id:</b> 3.9V @ 240\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 23nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 570pF @ 100V <b>Power - Max:</b> 63W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPU80R1K4CEBKMA1 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |