Vishay Mosfet Transistor, P Channel, -35 A, -40 V, 0.0097 Ohm, -10 V, -1 V Rohs Compliant: Yes - SIS443DN-T1-GE3
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 19X1957 | 1 | 53378 | 1 | 1 @ $1.67, 25 @ $1.50, 50 @ $1.34, 100 @ $1.17, 250 @ $1.15, 500 @ $0.96 |
| TME | SIS443DN-T1-GE3 | 1 | 1 | ||
| 4142143 | 1 | 112046 | 1 | 1 @ $1.91, 10 @ $1.71, 100 @ $1.33, 500 @ $1.10, 1000 @ $0.87, 3000 @ $0.81, 6000 @ $0.77, 15000 @ $0.74 | |
| Allied Electronics | 70459591 | 3000 | 3000 | ||
| RS Delivers | 180-7360 | 1 | 1 | 1 @ $0.77 | |
| swatee.com | SIS443DN-T1-GE3 | 1 | 2009 | 1 | 1 @ $2.84 |
| Future Electronics | 4080486 | 3000 | 3000 | 3000 @ $0.79, 6000 @ $0.63 | |
| Win Source | SIS443DN-T1-GE3 | 1 | 1 | 1 | |
| Hotenda | H1825543 | 1 | 3000 | 1 | 1 @ $0.64 |
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MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (500 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 40 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: - 35 A Rds On - Drain-Source Resistance: 16 mOhms Vgs th - Gate-Source Threshold Voltage: - 1 V to - 2.3 V Qg - Gate Charge: 41.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 52 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (10 pieces)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | SIS443DN-T1-GE3 |
| Label | Vishay Semiconductors |
| Manufacturer | Vishay Semiconductors |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (100 pieces)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | SIS443DN-T1-GE3 |
| Label | Vishay Semiconductors |
| Manufacturer | Vishay Semiconductors |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (5 pieces)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | SIS443DN-T1-GE3 |
| Label | Vishay Semiconductors |
| Manufacturer | Vishay Semiconductors |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (50 pieces)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | SIS443DN-T1-GE3 |
| Label | Vishay Semiconductors |
| Manufacturer | Vishay Semiconductors |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
MOSFET -40V .0117Ohm@10V 35A P-Ch G-III (1 piece)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | SIS443DN-T1-GE3 |
| Label | Vishay Semiconductors |
| Manufacturer | Vishay Semiconductors |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay Semiconductors |
SILICONIX (VISHAY) SIS443DN-T1-GE3 SiS443DN Series 40 V 35 A 11.7 mOhm P-Channel MOSFET - PowerPAK 1212-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
SiS443DN Series 40 V 35 A 11.7 mOhm P-Channel MOSFET - PowerPAK 1212-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: P-Ch
- Noofchannels: 1
- VoltageDraintoSource: 40 V
- Drain-sourceOnResistance-Max: 11.7 mΩ
- RatedPowerDissipation(P): 3.7 WQgGateCharge: 90 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 13.3 A; Turn-onTime-Nom(ton): 12 ns; Turn-offTime-Nom(toff): 48 ns; RiseTIme: 10 ns; FallTime: 10 ns; OperatingTempRange: -55 to +150 °C;
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SIS443DN-T1-GE3 |
| Part number | SIS443DN-T1-GE3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: P-Ch |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIS443DN-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |