Vishay N Channel Mosfet - SI2328DS-T1-E3

N CHANNEL MOSFET; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.5A; On Resistance Rds(on):0.25ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes

VISHAY SILICONIX SI2328DS-T1-E3 N CH MOSFET

Single N-Channel 100 V 0.25 Ohms Surface Mount Power Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Process Technology: TrenchFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 1.15 Maximum Drain Source Resistance (mOhm): 250@10V Typical Gate Charge @ Vgs (nC): 3.3@10V Typical Gate Charge @ 10V (nC): 3.3 Maximum Power Dissipation (mW): 1250 Typical Fall Time (ns): 10 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 9 Typical Turn-On Delay Time (ns): 7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Pin Count: 3 Standard Package Name: SOT Supplier Package: SOT-23 Mounting: Surface Mount Package Height: 1.02(Max) Package Length: 3.04(Max) Package Width: 1.4(Max) PCB changed: 3 Lead Shape: Gull-wing