Vishay N-Channel 8-V (D-S) Mosfet - SI8424CDB-T1-E1
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 67X6878 | 3000 | 3000 | 1 @ $0.25, 5000 @ $0.24, 10000 @ $0.22, 20000 @ $0.21, 30000 @ $0.20, 50000 @ $0.19 | |
| TME | SI8424CDB-T1-E1 | 1 | 1 | ||
| us.rs-online.com | 70617006 | 300 | 300 | 300 @ $0.43, 600 @ $0.41, 1500 @ $0.40, 3000 @ $0.38, 7500 @ $0.36, 15000 @ $0.33, 30000 @ $0.30 | |
| Allied Electronics | 70617006 | 1 | 1 | ||
| Digi-Key | 3877738 | 1 | 1 | 1 @ $0.78, 10 @ $0.67, 100 @ $0.50, 500 @ $0.39, 1000 @ $0.30, 3000 @ $0.28, 6000 @ $0.27 | |
| 818-1422 | 20 | 20 | 20 @ $0.18 | ||
 swatee.com | SI8424CDB-T1-E1 | 1 | 62 | 1 | 1 @ $1.22 |
| Future Electronics | 3047465 | 1 | 1 | 1 @ $0.47, 250 @ $0.34, 500 @ $0.32, 750 @ $0.32, 1500 @ $0.30 | |
| Hotenda | H1809757 | 1 | 9000 | 1 | 1 @ $0.21 |
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MOSFET 8V 10A 2.7W 20mOhms @ 4.5V (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 8 V Vgs - Gate-Source Breakdown Voltage: 0.8 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 8V 10A 2.7W 20mOhms @ 4.5V (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 8 V Vgs - Gate-Source Breakdown Voltage: 0.8 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 8V 10A 2.7W 20mOhms @ 4.5V (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 8 V Vgs - Gate-Source Breakdown Voltage: 0.8 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 8V 10A 2.7W 20mOhms @ 4.5V (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 8 V Vgs - Gate-Source Breakdown Voltage: 0.8 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 8V 10A 2.7W 20mOhms @ 4.5V (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 8 V Vgs - Gate-Source Breakdown Voltage: 0.8 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI8424CDB-T1-E1 Single N-Channel 8 V 20 mOhm 25 nC Surface Mount Power Mosfet - MICRO FOOT - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 8 V 20 mOhm 25 nC Surface Mount Power Mosfet - MICRO FOOT ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 8 V
- Drain-sourceOnResistance-Max: 0.02 Ω
- QgGateCharge: 25 nC
- RatedPowerDissipation(P): 2.7 W
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | SI8424CDB-T1-E1 |
| Part number | SI8424CDB-T1-E1 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
Mosfet 8V 10A 2.7W 20Mohms @ 4.5V
Brand: Vishay / Siliconix
Listing
| Product group | BISS |
|---|---|
| Product type | LAB_SUPPLY |
| Part number | SI8424CDB-T1-E1 |
| Items per pack | 1 |
| Label | Vishay Siliconix |
| Manufacturer | Vishay Siliconix |
Catalog
| Feature | 4.5V |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8424CDB-T1-E1 |
| Product group | BISS |
| Product type | LAB_SUPPLY |
| Manufacturer | Vishay Siliconix |
SI8424CDB-T1-E1, Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R (250 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 8 Maximum Gate Source Voltage (V): ±5 Maximum Gate Threshold Voltage (V): 0.8 Maximum Continuous Drain Current (A): 10 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 20@4.5V Typical Gate Charge @ Vgs (nC): 25@4.5V Typical Input Capacitance @ Vds (pF): 2340@4V Maximum Power Dissipation (mW): 2700 Typical Fall Time (ns): 20 Typical Rise Time (ns): 19 Typical Turn-Off Delay Time (ns): 73 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: Micro Foot Pin Count: 4 Standard Package Name: BGA Mounting: Surface Mount Package Height: 0.31(Max) Package Length: 1.6(Max) Package Width: 1.6(Max) PCB changed: 4 Lead Shape: Ball
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI8424CDB-T1-E1 |
| Part number | SI8424CDB-T1-E1 |
| Items per pack | 250 |
| Label | Vishay |
| Manufacturer | Vishay |