DIODES INCORPORATED ZXMD63C03XTA | Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| TME | ZXMD63C03XTA | 1 | 1 | ||
| Allied Electronics | 70438798 | 1 | 1 | ||
| Digi-Key | 1870209 | 1 | 1 | ||
| 121-9959 | 1 | 1 | |||
| Win Source | ZXMD63C03XTA | 1 | 54133 | 1 | |
| Future Electronics | 1578798 | 1000 | 1000 | 1000 @ $0.50, 2000 @ $0.49 |
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MOSFET 30V N&P Chnl HDMOS (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: + 2.3 A, - 2 A Configuration: Dual Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: MSOP-8 Packaging: Reel Fall Time: 4.1 ns, 4.8 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N&P Chnl HDMOS (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: + 2.3 A, - 2 A Configuration: Dual Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: MSOP-8 Packaging: Reel Fall Time: 4.1 ns, 4.8 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N&P Chnl HDMOS (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: + 2.3 A, - 2 A Configuration: Dual Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: MSOP-8 Packaging: Reel Fall Time: 4.1 ns, 4.8 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N&P Chnl HDMOS (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: + 2.3 A, - 2 A Configuration: Dual Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: MSOP-8 Packaging: Reel Fall Time: 4.1 ns, 4.8 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET 30V N&P Chnl HDMOS (1 piece)
Brand: Diodes Incorporated
Listing
| Binding | Electronics |
|---|---|
| Product group | CE |
| Product type | CONSUMER_ELECTRONICS |
| Model | ZXMD63C03XTA |
| Part number | ZXMD63C03XTA |
| Label | Diodes Incorporated |
| Manufacturer | Diodes Incorporated |
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: + 2.3 A, - 2 A Configuration: Dual Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: MSOP-8 Packaging: Reel Fall Time: 4.1 ns, 4.8 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
DIODES ZXMD63C03XTA N & P-Channel 30V 0.135 Ohm Surface Mount Enhancement Mode MOSFET-MSOP-8 - 1000 item(s)
Brand: DIODES
N & P-Channel 30V 0.135 Ohm Surface Mount Enhancement Mode MOSFET-MSOP-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N & P Channel
- VoltageDraintoSource: 30 / -30 V
- Drain-sourceOnResistance-Max: 0.135 / 0.185 Ω
- QgGateCharge: 8 / 7 nC
- RatedPowerDissipation(P): 1.25 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | ZXMD63C03XTA |
| Part number | ZXMD63C03XTA |
| Items per pack | 1000 |
| Label | DIODES |
| Manufacturer | DIODES |
Catalog
| Feature | ChannelType: Dual N & P Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | ZXMD63C03XTA |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | DIODES INC. |