NXP Semiconductors . PMDPB95XNE,115
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 70W0365 | 1 | 1 | ||
| Digi-Key | 4385888 | 1 | 1 | 4808 @ $0.07 | |
| Hotenda | H1802503 | 1 | 1 | ||
| PMDPB95XNE115 | 294000 | 1 @ $0.24, 25 @ $0.22, 100 @ $0.21, 500 @ $0.20, 1000 @ $0.19 |
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MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 95 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB95XNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 95 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB95XNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 95 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB95XNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 95 mOhms Configuration: Dual Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDPB95XNE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |