Ixys Semiconductor Mosfet, N-Ch, 1Kv, 10A, To-247Ad Rohs Compliant: Yes - IXFH10N100P
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 71AH4539 | 1 | 1 | 1 @ $8.09, 10 @ $7.55, 25 @ $7.01, 60 @ $6.46, 120 @ $6.13, 270 @ $5.78 | |
| JT25-IXFH10N100P | 1 | 19 | 1 | ||
| IXFH10N100P | 1 | 1 | 1 @ $6.30, 3 @ $5.57, 10 @ $5.01, 30 @ $4.67 | ||
| Digi-Key | 2038856 | 1000 | 1000 | 1 @ $7.92, 10 @ $7.16, 100 @ $5.93, 500 @ $5.16, 1000 @ $4.54 | |
| Hotenda | H1828626 | 1 | 1 | ||
| Future Electronics | 4084339 | 240 | 240 | 240 @ $3.56, 90 @ $3.23, 210 @ $3.09 |
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Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IXFH10N100P |
| Manufacturer | IXYS |
MOSFET 10 Amps 1000V (10 pieces)
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 1.4 Ohms Vgs th - Gate-Source Threshold Voltage: 6.5 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 380 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXFH10N100P |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |
MOSFET 10 Amps 1000V (5 pieces)
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 1.4 Ohms Vgs th - Gate-Source Threshold Voltage: 6.5 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 380 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXFH10N100P |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |
MOSFET 10 Amps 1000V (1 piece)
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 1.4 Ohms Vgs th - Gate-Source Threshold Voltage: 6.5 V Qg - Gate Charge: 56 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 380 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXFH10N100P |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |
IXFH10N100P, Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD (5 Items)
Brand: IXYS
IXFH10N100P, Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) TO-247AD (5 items)