Vishay Mosfet, P Channel, -20V, 0.0072Ohm, -35A, Powerpak 1212 - SI7613DN-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±16 Maximum Gate Threshold Voltage (V): 2.2 Maximum Continuous Drain Current (A): 17 Maximum Drain Source Resistance (mOhm): 8.7@10V Typical Gate Charge @ Vgs (nC): 58@10V|28.1@4.5V Typical Gate Charge @ 10V (nC): 58 Typical Gate to Drain Charge (nC): 7.6 Typical Gate to Source Charge (nC): 8.8 Typical Reverse Recovery Charge (nC): 20 Typical Input Capacitance @ Vds (pF): 2620@10V Typical Output Capacitance (pF): 535 Maximum Power Dissipation (mW): 3800 Typical Fall Time (ns): 9|13 Typical Rise Time (ns): 40|7 Typical Turn-Off Delay Time (ns): 41|42 Typical Turn-On Delay Time (ns): 43|14 Minimum Operating Temperature (°C): -50 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead