Nexperia Mosfet, N/p Channel, 20/20V, 800/550Ma,sot666 - PMDT290UCE,115
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 75T8010 | 5 | 425 | 5 | 1 @ $0.35, 10 @ $0.28, 100 @ $0.15, 500 @ $0.13, 1000 @ $0.11, 2500 @ $0.10, 12000 @ $0.08, 28000 @ $0.08 |
| TME | PMDT290UCE.115 | 1 | 1 | ||
 Digi-Key | 2780237 | 1 | 1 | 1 @ $0.43, 10 @ $0.34, 100 @ $0.24, 500 @ $0.18, 1000 @ $0.13, 2000 @ $0.12, 4000 @ $0.12, 8000 @ $0.11, 12000 @ $0.11, 28000 @ $0.10 | |
| 816-6814 | 1 | 1 | |||
 swatee.com | PMDT290UCE,115 | 1 | 1581 | 1 | 1 @ $0.80 |
| iodParts | PMDT290UCE,115 | 4000 | 72000 | 4000 | 4000 @ $0.07, 8000 @ $0.07, 16000 @ $0.07, 24000 @ $0.07, 32000 @ $0.07 |
 AmazonTP | B07W3QFJ9H | 1 | 1 | 1 @ $42.00 | |
| Win Source | PMDT290UCE,115 | 1 | 1 | 1 | |
| Hotenda | H1800076 | 1 | 4000 | 1 | 1 @ $0.11 |
| Digi-Key | 568-10765-1-ND | 1 | 1 | 1 @ $0.41, 10 @ $0.33, 100 @ $0.23, 500 @ $0.17, 1000 @ $0.13 |
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MOSFET 20/20V, 800/550 mA N/P-ch Trench MOSFET
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N and P-Channel Vds - Drain-Source Breakdown Voltage: 20 V, - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: 800 mA Rds On - Drain-Source Resistance: 290 mOhms, 670 mOhms Configuration: Dual Qg - Gate Charge: 0.45 nC, 0.76 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 330 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDT290UCE,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N/P-CH 20V SOT666 (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>FET Type:</b> N and P-Channel <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 800mA, 550mA <b>Rds On (Max) @ Id, Vgs:</b> 380 mOhm @ 500mA, 4.5V <b>Vgs(th) (Max) @ Id:</b> 0.95V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 0.68nC @ 4.5V <b>Input Capacitance (Ciss) @ Vds:</b> 83pF @ 10V <b>Power - Max:</b> 500mW" |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDT290UCE,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET N/P-CH 20V SOT666 (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>FET Type:</b> N and P-Channel <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 20V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 800mA, 550mA <b>Rds On (Max) @ Id, Vgs:</b> 380 mOhm @ 500mA, 4.5V <b>Vgs(th) (Max) @ Id:</b> 0.95V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 0.68nC @ 4.5V <b>Input Capacitance (Ciss) @ Vds:</b> 83pF @ 10V <b>Power - Max:</b> 500mW" |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMDT290UCE,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
PMDT290UCE,115, Trans MOSFET N/P-CH 20V 0.8A/0.55A Automotive 6-Pin SOT-666 T/R (50 Items)
Brand: NEXPERIA
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | PMDT290UCE,115 |
| Part number | PMDT290UCE,115 |
| Items per pack | 50 |
| Label | Nexperia |
| Manufacturer | Nexperia |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | PMDT290UCE,115 |
| EAN | 6400660711263 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Nexperia |