As an Amazon Associate, we earn from qualifying purchases.

IXYS IXTY08N100P | Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns

IXYS . IXTY08N100P

Gallery

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute00, Brand, Label, Man, Publisher, StudioIXYS
Attribute01N-MOSFET
Attribute02unipolar
Attribute031kV
Attribute040.8A
Attribute0542W
Attribute06TO252
Attribute0720?
Attribute08SMD
Attribute09tube
Attribute10enhanced
Attribute11standard power mosfet
Attribute12750ns
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Polarisation
AttributeKey03Drain-source voltage
AttributeKey04Drain current
AttributeKey05Power dissipation
AttributeKey06Case
AttributeKey07On-state resistance
AttributeKey08Mounting
AttributeKey09Kind of package
AttributeKey10Kind of channel
AttributeKey11Features of semiconductor devices
AttributeKey12Reverse recovery time
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameIXYS IXTY08N100P | Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
atoms, moq, multiple, tierMinQty11
jsonUrlData53aad04fe23d6a0fe5a9676a8a066751.
jsonUrlData25d70fa5b44d032795508
keywordsIXYS, IXTY08N100P
MPN, SKU, Part Number, PartNumberIXTY08N100P
qtyInStock0
snippetIXYS IXTY08N100P | Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750n
tierMinQty25
tierMinQty325
tierMinQty470
tierPrice13.39
tierPrice23.04
tierPrice32.69
tierPrice42.42
AsinB00HKZ3E7E B00LWOU0ZI B00LWOU418 B00M2DWR9A
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXTY08N100P X1 MS 747-IXTY08N100P X10 MS 747-IXTY08N100P X5
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 800 mA Rds On - Drain-Source Resistance: 20 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT Package / Case: DPAK-2
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET 0.8 Amps 1000V 20 Rds (1 piece) MOSFET 0.8 Amps 1000V 20 Rds (10 pieces) MOSFET 0.8 Amps 1000V 20 Rds (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEIXTY08N100P111 @ $3.39, 5 @ $3.04, 25 @ $2.69, 70 @ $2.42
Digi-Key199509220006720001 @ $3.13, 10 @ $2.81, 100 @ $2.31, 500 @ $1.96, 1000 @ $1.66, 2000 @ $1.61
HotendaH182815811

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET 0.8 Amps 1000V 20 Rds (10 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 800 mA Rds On - Drain-Source Resistance: 20 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIXTY08N100P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET 0.8 Amps 1000V 20 Rds (5 pieces)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 800 mA Rds On - Drain-Source Resistance: 20 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIXTY08N100P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)
MOSFET 0.8 Amps 1000V 20 Rds (1 piece)
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1 kV Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 800 mA Rds On - Drain-Source Resistance: 20 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 42 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIXTY08N100P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
View on Amazon (paid link)