PMN25UN,115 NXP USA Inc. | Discrete Semiconductor Products | DigiKey Marketplace
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 2780245 | 1 | 1 | 3606 @ $0.08 | |
![]() swatee.com | PMN25UN,115 | 1 | 3785 | 1 | 1 @ $0.92 |
| iodParts | PMN25UN,115 | 1 | 15000 | 1 | |
| Hotenda | H1841011 | 1 | 1 | ||
| PMN25UN115 | 11984 | 1 @ $0.13, 25 @ $0.12, 100 @ $0.11, 500 @ $0.11, 1000 @ $0.10 |
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MOSFET 20V 6 A N-CH TRENCH MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (1000 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET 20V 6 A N-CH TRENCH MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 20 V Vgs - Gate-Source Breakdown Voltage: +/- 8 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 23 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 530 mW Mounting Style: SMD/SMT Package / Case: SOT-457-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | PMN25UN,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
