Vishay N Channel Mosfet, 30V, 3.16A To-236 - SI2306BDS-T1-E3

N CHANNEL MOSFET, 30V, 3.16A TO-236; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.16A; On Resistance Rds(on):0.038ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Single N-Channel 30 V 0.047 Ohms Surface Mount Power Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

Single N-Channel 30 V 0.047 Ohms Surface Mount Power Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 3.16 Maximum Drain Source Resistance (mOhm): 47@10V Typical Gate Charge @ Vgs (nC): 3@5V Typical Input Capacitance @ Vds (pF): 305@15V Maximum Power Dissipation (mW): 1250 Typical Fall Time (ns): 6 Typical Rise Time (ns): 12 Typical Turn-Off Delay Time (ns): 14 Typical Turn-On Delay Time (ns): 7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SOT-23 Pin Count: 3 Standard Package Name: SOT Mounting: Surface Mount Package Height: 1.02(Max) Package Length: 3.04(Max) Package Width: 1.4(Max) PCB changed: 3 Lead Shape: Gull-wing