Vishay P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes - SI1013CX-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±8 Maximum Gate Threshold Voltage (V): 1 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 0.45 Maximum Gate Source Leakage Current (nA): 30000 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 760@4.5V Typical Gate Charge @ Vgs (nC): 1.65@4.5V|1@2.5V Typical Gate to Drain Charge (nC): 0.26 Typical Gate to Source Charge (nC): 0.2 Typical Reverse Recovery Charge (nC): 8 Typical Input Capacitance @ Vds (pF): 45@10V Typical Reverse Transfer Capacitance @ Vds (pF): 10@10V Minimum Gate Threshold Voltage (V): 0.4 Typical Output Capacitance (pF): 15 Maximum Power Dissipation (mW): 190 Typical Fall Time (ns): 8 Typical Rise Time (ns): 10 Typical Turn-Off Delay Time (ns): 10 Typical Turn-On Delay Time (ns): 9 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 0.19 Maximum Pulsed Drain Current @ TC=25°C (A): 1.5 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 650 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 1.7 Typical Reverse Recovery Time (ns): 16 Maximum Diode Forward Voltage (V): 1.2 Minimum Gate Resistance (Ohm): 2.4 Maximum Gate Resistance (Ohm): 24 Maximum Positive Gate Source Voltage (V): 8 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 0.45 Supplier Package: SC-89 Pin Count: 3 Standard Package Name: SC Mounting: Surface Mount Package Height: 0.8(Max) Package Length: 1.7(Max) Package Width: 0.95(Max) PCB changed: 3 Lead Shape: Flat