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STMICROELECTRONICS . STGD5NB120SZT4

Attributes

Brand name, Manufacturer nameSTMICROELECTRONICS
ManufacturerSTMICROELECTRONICS ST MICROELECTRONICS STMicroelectronics
extendedQty, qtyInStock0
moq, multiple, Item_package_quantity1
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_number, SkuSTGD5NB120SZT4
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB00LVHU0CY B00LVHU3C6 B011NDPAVG B0748MTTK1
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LVHTUGG B00LVHTVQA B00LVHU0CY B00LVHU1SM B00LVHU3C6 B00M1GMJ28 B00MEKT7IK B011NDPAVG B011NNYE9U B011NNYGUC B073RQJHV3 B0748MTTK1
BrandST MICROELECTRONICS STMicroelectronics
Bullet_point<b>Order Unit:</b> Tape &amp; Reel Cut&nbsp;1 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252 Collector-emitterVoltage-Max: 1200 V CollectorEmitterSaturationVoltage: 2 V GateEmitterVoltage: ±20 V PulsedCollectorCurrent: 10 A Turn-onTime-Nom(ton): 690 nsTurn-offTime-Nom(toff): 12.1 µs; LeakageCurrent: -100|100; LowInputCapacitance: 430 pF; ThermalResistance: 100 °C/W; OperatingTempRange: -55 to +150 °C; NumberofTerminals: 3; CollectorCurrent25C: 10 A; PowerDis
Case1 10 100 25 2500 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 511-STGD5NB120SZ MS 511-STGD5NB120SZ X500
ClassificationId306843011 306916011
DisplayNameCommunication Integrated Circuits IGBT
Feature<b>Price For:</b> Pack of 25<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252 <b>Price For:</b> Pack of 50<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252 Collector-emitterVoltage-Max: 1200 V Manufacturer: STMicroelectronics Product Category: IGBTs Insulated Gate Bipolar Transistor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 55 W Maximum Operating Temperature: + 150 C
FetchTime1542928801 1542994366 1579323978 1626207718 1652047504 1660339091 1704607888 1704607889
Height200 243 56 75
ItemClassificationBASE_PRODUCT VARIATION_PARENT
ItemName, Item_nameST MICROELECTRONICS STGD5NB120SZT4 STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 - 2500 item(s) STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3
Item_type_keywordcommunication-integrated-circuits igbt-transistors
Item_weight0.63
Label, Man, Publisher, StudioST MICROELECTRONICS STMICROELECTRONICS STMicroelectronics
Linkhttps://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg https://m.media-amazon.com/images/I/218E+YhkL4L.jpg https://m.media-amazon.com/images/I/21c+a6Rvg-L._SL75_.jpg https://m.media-amazon.com/images/I/21c+a6Rvg-L.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems25 2500 5 50
Number_of_items2500
PackageQuantity1 10 100 25 5 50 500
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionSTGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image ***** STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3
Product_site_launch_date2015-07-15T06:35:22.820Z 2017-07-26T16:35:04.000Z
Size25 pack 50 pack 500
TitleIGBT Transistors N-Ch 1200 Volt 5 Amp IGBT Transistors N-Ch 1200 Volt 5 Amp (1 piece) IGBT Transistors N-Ch 1200 Volt 5 Amp (10 pieces) IGBT Transistors N-Ch 1200 Volt 5 Amp (100 pieces) IGBT Transistors N-Ch 1200 Volt 5 Amp (5 pieces) IGBT Transistors N-Ch 1200 Volt 5 Amp (50 pieces) IGBT Transistors N-Ch 1200 Volt 5 Amp (500 pieces) ST MICROELECTRONICS STGD5NB120SZT4 Discretes igbts STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 - 5 item(s) ST MICROELECTRONICS STGD5NB120SZT4 STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 - 2500 item(s) STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3 STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3 (25 pieces) STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3 (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/218E%2BYhkL4L._SL75_.jpg http://ecx.images-amazon.com/images/I/31js0MeIOLL._SL75_.jpg http://ecx.images-amazon.com/images/I/31kRdGVd6AL._SL75_.jpg https://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg https://m.media-amazon.com/images/I/21c+a6Rvg-L._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0013889122506
Width200 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark06X085611
Newark07X194711
4 Star ElectronicsSTGD5NB120SZT411
jotrin.comJT25-STGD5NB120SZT4155001
st.comSTGD5NB120SZT4111 @ $2.16, 10 @ $1.93, 100 @ $1.56
TMESTGD5NB120SZT4111 @ $1.75, 5 @ $1.55, 25 @ $1.39, 100 @ $1.30, 250 @ $1.20
RS Delivers877-2879111 @ $2.27
1SourceSTGD5NB120SZT411
Digi-Key725612112500 @ $1.41
AmazonSCB00LVHU0CY11
Win SourceSTGD5NB120SZT42012020 @ $1.39, 50 @ $1.30, 150 @ $1.22
HotendaH1848198111 @ $0.84
Future Electronics91627692500500025002500 @ $1.24

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IGBT Transistors N-Ch 1200 Volt 5 Amp (10 pieces)
Catalog
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp (100 pieces)
Catalog
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp (5 pieces)
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberSTGD5NB120SZT4
LabelSTMicroelectronics
ManufacturerSTMicroelectronics
Catalog
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp (50 pieces)
Catalog
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp (500 pieces)
Brand: STMicroelectronics
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberSTGD5NB120SZT4
LabelSTMicroelectronics
ManufacturerSTMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBTs Insulated Gate Bipolar Transistor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 55 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp (1 piece)
Catalog
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors N-Ch 1200 Volt 5 Amp
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBTs Insulated Gate Bipolar Transistor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 55 W Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3
Brand: STMicroelectronics
STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3
Details
  • <b>Order Unit:</b> Tape &amp; Reel Cut&nbsp;1 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252
Listing
Product groupBISS Basic
Product typeBISS
Part numberSTGD5NB120SZT4
LabelSTMICROELECTRONICS
ManufacturerSTMICROELECTRONICS
View on Amazon (paid link)
STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3 (50 pieces)
Brand: STMicroelectronics
Catalog
Feature<b>Price For:</b> Pack of 50<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeBISS
ManufacturerSTMICROELECTRONICS
View on Amazon (paid link)
STMICROELECTRONICS STGD5NB120SZT4 IGBT, 1.3V, 10A, TO-252-3 (25 pieces)
Brand: STMicroelectronics
Catalog
Feature<b>Price For:</b> Pack of 25<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Collector Emitter Voltage V(br)ceo:</b>: 1.2 <b>Collector Emitter Voltage Vces:</b>: 1.2 <b>DC Collector Current:</b>: 10 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 3 <b>Operating Temperature Max:</b>: 150 <b>Power Dissipation Pd:</b>: 75 <b>SVHC:</b>: No SVHC (17-Dec-2014) <b>Transistor Case Style:</b>: TO-252
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeBISS
ManufacturerSTMICROELECTRONICS
View on Amazon (paid link)
ST MICROELECTRONICS STGD5NB120SZT4 Discretes igbts STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 - 5 item(s)
Brand: ST MICROELECTRONICS
Catalog
FeatureCollector-emitterVoltage-Max: 1200 V
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerST MICROELECTRONICS
View on Amazon (paid link)
ST MICROELECTRONICS STGD5NB120SZT4 STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 - 2500 item(s)
Brand: STMicroelectronics
STGD5NB120SZ Series IGBT Utilizes Advanced Power Mesh SMT IGBT - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • Collector-emitterVoltage-Max: 1200 V
  • GateEmitterVoltage: ±20 V
  • PulsedCollectorCurrent: 10 A
  • CollectorEmitterSaturationVoltage: 2 V
  • Turn-onTime-Nom(ton): 690 nsTurn-offTime-Nom(toff): 12.1 µs; LeakageCurrent: -100|100; LowInputCapacitance: 430 pF; ThermalResistance: 100 °C/W; OperatingTempRange: -55 to +150 °C; NumberofTerminals: 3; CollectorCurrent25C: 10 A; PowerDis
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelSTGD5NB120SZT4
Part numberSTGD5NB120SZT4
Items per pack2500
LabelST MICROELECTRONICS
ManufacturerST MICROELECTRONICS
Catalog
FeatureCollector-emitterVoltage-Max: 1200 V
CategoryIndustrial & Scientific
MPNSTGD5NB120SZT4
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerST MICROELECTRONICS
View on Amazon (paid link)