IXGT10N170A SemiConductor - CASE: TO268AA MAKE: IXYS
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | IXGT10N170A | 1 | 1 | ||
| IXGT10N170A | 1 | 1 | |||
| Digi-Key | 1652266 | 30 | 30 | 30 @ $8.76 | |
| Hotenda | H1849611 | 1 | 1 | ||
| Future Electronics | 4293106 | 120 | 120 | 120 @ $7.79, 10 @ $6.28, 25 @ $5.76, 50 @ $5.40, 100 @ $5.06 |
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IGBT Transistors 20 Amps 1700 V 7 V Rds (5 pieces)
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter Saturation Voltage: 4.5 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 140 W Maximum Operating Temperature: + 150 C Package / Case: TO-268-3 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXGT10N170A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |
IGBT Transistors 20 Amps 1700 V 7 V Rds (1 piece)
Brand: IXYS
Catalog
| Feature | Manufacturer: IXYS Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter Saturation Voltage: 4.5 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: 100 nA Power Dissipation: 140 W Maximum Operating Temperature: + 150 C Package / Case: TO-268-3 Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | IXGT10N170A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | IXYS |