VISHAY . SI2301CDS-T1-E3

MOSFET Transistor, P Channel, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV RoHS Compliant: Yes

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±8 Maximum Gate Threshold Voltage (V): 1 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 3.1 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 112@4.5V Typical Gate Charge @ Vgs (nC): 3.3@2.5V|5.5@4.5V Typical Gate to Drain Charge (nC): 1.3 Typical Gate to Source Charge (nC): 0.7 Typical Reverse Recovery Charge (nC): 25 Typical Input Capacitance @ Vds (pF): 405@10V Typical Reverse Transfer Capacitance @ Vds (pF): 55@10V Minimum Gate Threshold Voltage (V): 0.4 Typical Output Capacitance (pF): 75 Maximum Power Dissipation (mW): 860 Typical Fall Time (ns): 10 Typical Rise Time (ns): 35 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 11 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 0.86 Maximum Pulsed Drain Current @ TC=25°C (A): 10 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 175 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 1.6 Typical Reverse Recovery Time (ns): 30 Maximum Diode Forward Voltage (V): 1.2 Maximum Positive Gate Source Voltage (V): 8 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 2.3 Supplier Package: SOT-23 Pin Count: 3 Standard Package Name: SOT Mounting: Surface Mount Package Height: 1.02(Max) Package Length: 3.04(Max) Package Width: 1.4(Max) PCB changed: 3 Lead Shape: Gull-wing