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Vishay N Channel Mosfet, 40V, 58A, Soic - SI7884BDP-T1-GE3

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Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) VISHAY SILICONIX Vishay Vishay / Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameVishay N Channel Mosfet, 40V, 58A, Soic - SI7884BDP-T1-GE3
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple3000
MPN, Part Number, Model, ModelNumber, Model_number, Mpns, PartNumber, Part_numberSI7884BDP-T1-GE3
qtyInStock0
SKU16P3877
tierMinQty1, Item_package_quantity1
tierPrice12.11
urlhttps://www.newark.com/16P3877?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB00LWQ639I B00LWQ64PQ B00LWQ67O4 B00LWQ69EW B00M2EC6IG B076FBHXSZ
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00LWQ639I B00LWQ64PQ B00LWQ67O4 B00LWQ69EW B00LWQ6B72 B00M2EC6IG B011NAC7MO B011NACAHQ B011NACFCQ B011NACJ0O B011NACNCI B076FBHXSZ B09T61QSPF
BrandSILICONIX (VISHAY) Vishay Vishay / Siliconix
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 0.0075 ? QgGateCharge: 77 nC RatedPowerDissipation(P): 46 W VoltageDraintoSource: 40 V
Case1 10 100 3000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SI7884BDP-T1-GE3 X1 MS 781-SI7884BDP-T1-GE3 X10 MS 781-SI7884BDP-T1-GE3 X100 MS 781-SI7884BDP-T1-GE3 X5 MS 781-SI7884BDP-T1-GE3 X50 MS 781-SI7884BDP-T1-GE3 X500
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier6098016669612
Feature<b>Price For:</b> Pack of 100<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3 <b>Price For:</b> Pack of 10<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3 <b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3 <b>Price For:</b> Pack of 50<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3 <b>Price For:</b> Pack of 5<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3 ChannelType: N-Channel Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
FetchTime1535648500 1535648506 1535648511 1565911243 1568426877 1568988411 1574104552 1580142940 1625733322 1651496875 1683625966 1714739771
Height150 243 56 71 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSI7884BDP-T1-GE3, Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R (25 Items) SILICONIX (VISHAY) SI7884BDP-T1-GE3 N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8-3000 item(s)
Item_type_keywordmosfet-transistors
Item_weight0.34
Keyword7884
Label, Man, Publisher, StudioSILICONIX (VISHAY) VISHAY SILICONIX Vishay / Siliconix
Linkhttps://m.media-amazon.com/images/I/11Wo7Lolq7L._SL75_.jpg https://m.media-amazon.com/images/I/11Wo7Lolq7L.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems1 10 100 3000 5 50
Number_of_items25 3000
OldTitleMOSFET 40V 58A 46W 7.5mohm @ 10V (1 piece)
PackageQuantity1 10 100 5 50 500
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 58 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 7.5@10V Typical Gate Charge @ Vgs (nC): 51@10V|21@4.5V Typical Gate Charge @ 10V (nC): 51 Typical Gate to Drain Charge (nC): 3 Typical Gate to Source Charge (nC): 10.7 Typical Reverse Recovery Charge (nC): 19 Typical Input Capacitance @ Vds (pF): 3540@20V Typical Reverse Transfer Capacitance @ Vds (pF): 142@20V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 335 Maximum Power Dissipation (mW): 4600 Typical Fall Time (ns): 11 Typical Rise Time (ns): 14 Typical Turn-Off Delay Time (ns): 38 Typical Turn-On Delay Time (ns): 30 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 4.6 Maximum Pulsed Drain Current @ TC=25°C (A): 50 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 70 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 3.2 Typical Reverse Recovery Time (ns): 25 Maximum Diode Forward Voltage (V): 1.2 Maximum Gate Resistance (Ohm): 1.5 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 18.5 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8 For more info refer to the specification sheet located in the 'Downloads' section below the image
Product_site_launch_date2017-10-13T15:12:35.193Z 2020-07-23T20:53:18.049Z
Size1 Piece 1 pack 10 Piece 10 pack 100 Piece 100 pack 5 Piece 5 pack 50 Piece 50 pack 500
SkuSI7884BDP-T1-GE3 VISHAY SI7884BDP-T1-GE3 VISHAY SILICONIX SI7884BDP-T1-GE3 VISHAY/SILICONIX SI7884BDP-T1-GE3 Vishay Siliconix SI7884BDP-T1-GE3
StrippedMpnsSI7884BDPT1GE3
TitleMOSFET 40V 58A 46W 7.5mohm @ 10V (10 pieces) MOSFET 40V 58A 46W 7.5mohm @ 10V (100 pieces) MOSFET 40V 58A 46W 7.5mohm @ 10V (5 pieces) MOSFET 40V 58A 46W 7.5mohm @ 10V (50 pieces) MOSFET 40V 58A 46W 7.5mohm @ 10V (500 pieces) SILICONIX (VISHAY) SI7884BDP-T1-GE3 N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8-3000 item(s) VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (1 piece) VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (10 pieces) VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (100 pieces) VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (5 pieces) VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (50 pieces)
TitleSourcelistings feed
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URLhttp://ecx.images-amazon.com/images/I/4132DWdjzIL._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
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WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0007495716908
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark16P3877300030001 @ $2.11
jotrin.comJT25-SI7884BDP-T1-GE3127001
1SourceSI7884BDP-T1-GE311
RadwellSI7884BDP-T1-GE31111
Digi-Key1978931111 @ $2.51, 10 @ $2.26, 100 @ $1.81, 500 @ $1.49, 1000 @ $1.28, 3000 @ $1.28
swatee.comSI7884BDP-T1-GE31278411 @ $3.43
Win SourceSI7884BDP-T1-GE311001
HotendaH18071621600011 @ $0.67
Future Electronics1120278300030003000 @ $0.61

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MOSFET 40V 58A 46W 7.5mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberSI7884BDP-T1-GE3
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 40V 58A 46W 7.5mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberSI7884BDP-T1-GE3
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 40V 58A 46W 7.5mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberSI7884BDP-T1-GE3
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 40V 58A 46W 7.5mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberSI7884BDP-T1-GE3
LabelVishay / Siliconix
ManufacturerVishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 40V 58A 46W 7.5mohm @ 10V (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC
Brand: Vishay / Siliconix
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberSI7884BDP-T1-GE3
LabelVISHAY SILICONIX
ManufacturerVISHAY SILICONIX
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 7.5 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.6 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (1 piece)
Brand: Vishay / Siliconix
Catalog
Feature<b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (10 pieces)
Brand: Vishay / Siliconix
Catalog
Feature<b>Price For:</b> Pack of 10<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (100 pieces)
Brand: Vishay / Siliconix
Catalog
Feature<b>Price For:</b> Pack of 100<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (5 pieces)
Brand: Vishay / Siliconix
Catalog
Feature<b>Price For:</b> Pack of 5<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
VISHAY SILICONIX SI7884BDP-T1-GE3 N CHANNEL MOSFET, 40V, 58A, SOIC (50 pieces)
Brand: Vishay / Siliconix
Catalog
Feature<b>Price For:</b> Pack of 50<b>Order Unit:</b> Tape & Reel Full\xa01 <b>Continuous Drain Current Id:</b>: 58 <b>Drain Source Voltage Vds:</b>: 40 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.0062 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 4.6 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 3
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVISHAY SILICONIX
View on Amazon (paid link)
SILICONIX (VISHAY) SI7884BDP-T1-GE3 N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8-3000 item(s)
Brand: SILICONIX (VISHAY)
N-Channel 40 V 0.0075 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8 For more info refer to the specification sheet located in the 'Downloads' section below the image
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 40 V
  • Drain-sourceOnResistance-Max: 0.0075 ?
  • QgGateCharge: 77 nC
  • RatedPowerDissipation(P): 46 W
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelSI7884BDP-T1-GE3
Part numberSI7884BDP-T1-GE3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNSI7884BDP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
SI7884BDP-T1-GE3, Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 40 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 3 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 58 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 7.5@10V Typical Gate Charge @ Vgs (nC): 51@10V|21@4.5V Typical Gate Charge @ 10V (nC): 51 Typical Gate to Drain Charge (nC): 3 Typical Gate to Source Charge (nC): 10.7 Typical Reverse Recovery Charge (nC): 19 Typical Input Capacitance @ Vds (pF): 3540@20V Typical Reverse Transfer Capacitance @ Vds (pF): 142@20V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 335 Maximum Power Dissipation (mW): 4600 Typical Fall Time (ns): 11 Typical Rise Time (ns): 14 Typical Turn-Off Delay Time (ns): 38 Typical Turn-On Delay Time (ns): 30 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 4.6 Maximum Pulsed Drain Current @ TC=25°C (A): 50 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 70 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 3.2 Typical Reverse Recovery Time (ns): 25 Maximum Diode Forward Voltage (V): 1.2 Maximum Gate Resistance (Ohm): 1.5 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 18.5 Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead
View on Amazon (paid link)