Microsemi Corporation . APT50GP60B2DQ2G
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| APT50GP60B2DQ2G-ND | 40 | 1 | 40 @ $13.78 | ||
| Hotenda | H1849376 | 1 | 32 | 1 | 1 @ $16.22, 10 @ $14.75, 50 @ $13.64, 100 @ $12.54, 250 @ $11.43, 500 @ $10.69 |
| 1Source | APT50GP60B2DQ2G | 1 | 1 | ||
| Future Electronics | 9079478 | 2 | 2 | 2 | 2 @ $9.07 |
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MICROSEMI APT50GP60B2DQ2G APT50GP60xx Series 600 V 150 A Through Hole Power MOS 7 IGBT - TO-247-3 - 100 item(s)
Brand: MICROSEMI
APT50GP60xx Series 600 V 150 A Through Hole Power MOS 7 IGBT - TO-247-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- Collector-emitterVoltage-Max: 600 V
- CollectorCurrent25C: 150 A
- PowerDissipationAmbient-Max: 625 W
- GateEmitterVoltage: 30 V
- PulsedCollectorCurrent: 190 A Turn-onTime-Nom(ton): 19 ns; Turn-offTime-Nom(toff): 85 ns; QgGateCharge: 165 nC; LeakageCurrent: 100 nA; LowInputCapacitance: 5700 pF; ThermalResistance: 0.2 °C/W; OperatingTempRange: -55 to +150 °C; Numberof
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | APT50GP60B2DQ2G |
| Part number | APT50GP60B2DQ2G |
| Items per pack | 100 |
| Label | MICROSEMI |
| Manufacturer | MICROSEMI |
Catalog
| Feature | Collector-emitterVoltage-Max: 600 V |
|---|---|
| Category | Industrial & Scientific |
| MPN | APT50GP60B2DQ2G |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | MICROSEMI |