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APT75GN60LDQ3G MICROSEMI Transistors - Jotrin Electronics

Microsemi Corporation (Microchip ) . APT75GN60LDQ3G

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Attributes

Brand name, Manufacturer nameMicrosemi Corporation (Microchip )
ManufacturerMicrosemi Corporation (Microchip ) MICROSEMI Microsemi
Attribute00TO-264
Attribute01Transistors - IGBTs - Single
Attribute02Lead free/RoHS Compliant
Attribute03, qtyInStock29688
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
Extra Product NameAPT75GN60LDQ3G MICROSEMI Transistors - Jotrin Electronics
keywordsAPT75GN60LDQ3G,MICROSEMI,TO-264,Transistors - IGBTs - Single,APT75GN60LDQ3G Datasheet PDF
moq, multiple, Case, Item_package_quantity, NumberOfItems, Number_of_items, PackageQuantity1
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberAPT75GN60LDQ3G
SKUJT25-APT75GN60LDQ3G
snippetBuy APT75GN60LDQ3G MICROSEMI , Learn more about APT75GN60LDQ3G Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-264 [L]; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 92;, View the manufacturer, and stock, and datasheet pdf for the APT75GN60LDQ3G at Jotrin Electronics.
Product Group, ProductGroup, ProductType, ProductTypeName, WebsiteDisplayGroupNameBISS
ASINB073RQ541N
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB0137IQUJQ B073RQ541N
Brand, Label, Man, Publisher, StudioMICROSEMI Microsemi
Bullet_pointCollector-emitterVoltage-Max: 600 V CollectorCurrent25C: 155 A PowerDissipationAmbient-Max: 536 W Turn-offTime-Nom(toff): 385 ns Turn-onTime-Nom(ton): 47 ns
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306506011
DisplayNameIndustrial Electrical
Feature<b>Price For:</b> Each <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 1.45 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 155 A <b>Gate-Emitter Leakage Current</b>: 600 nA <b>Power Dissipation</b>: 536 W <b>Maximum Operating Temperature</b>: + 175 C Collector-emitterVoltage-Max: 600 V
FetchTime1538077320 1636867889 1674717911 1714856141
Height450 73 75
ItemClassificationBASE_PRODUCT
ItemName, Item_nameMICROSEMI APT75GN60LDQ3G IGBT 600V 155A 536W TO264-3 - 1 item(s)
Item_type_keywordelectronic-components
Item_weight0.04
Linkhttps://m.media-amazon.com/images/I/41g2FcAPGNL._SL75_.jpg https://m.media-amazon.com/images/I/41g2FcAPGNL.jpg
Marketplace_idATVPDKIKX0DER
Product_descriptionIGBT 600V 155A 536W TO264-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-07-06T17:24:52.991Z
TitleIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi MICROSEMI APT75GN60LDQ3G IGBT 600V 155A 536W TO264-3 - 1 item(s)
URLhttp://ecx.images-amazon.com/images/I/114YPvFH-hL._SL75_.jpg https://m.media-amazon.com/images/I/41g2FcAPGNL._SL75_.jpg
Unitpounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_display_on_website
Weight0.04 0.0440924524000
Width450 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-APT75GN60LDQ3G1296881
AmazonSCB073RQ541N11
Digi-KeyAPT75GN60LDQ3G-ND1259011 @ $11.50, 10 @ $10.39, 25 @ $9.90, 100 @ $8.21, 250 @ $7.73, 500 @ $7.25, 1000 @ $6.52, 2500 @ $6.28
Win SourceAPT75GN60LDQ3G133581
HotendaH1848178111 @ $11.84, 10 @ $10.66, 50 @ $9.71, 100 @ $8.76, 250 @ $8.05, 500 @ $7.34
1SourceAPT75GN60LDQ3G11
Future Electronics3009390250250250 @ $13.03, 10 @ $11.85, 60 @ $10.16

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IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Each <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 1.45 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 155 A <b>Gate-Emitter Leakage Current</b>: 600 nA <b>Power Dissipation</b>: 536 W <b>Maximum Operating Temperature</b>: + 175 C
CategoryIndustrial & Scientific
MPNAPT75GN60LDQ3G
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
View on Amazon (paid link)
MICROSEMI APT75GN60LDQ3G IGBT 600V 155A 536W TO264-3 - 1 item(s)
Brand: MICROSEMI
IGBT 600V 155A 536W TO264-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • Collector-emitterVoltage-Max: 600 V
  • CollectorCurrent25C: 155 A
  • PowerDissipationAmbient-Max: 536 W
  • Turn-onTime-Nom(ton): 47 ns
  • Turn-offTime-Nom(toff): 385 ns
Listing
Product groupBISS
Product typeBISS
ModelAPT75GN60LDQ3G
Part numberAPT75GN60LDQ3G
Items per pack1
LabelMICROSEMI
ManufacturerMICROSEMI
Catalog
FeatureCollector-emitterVoltage-Max: 600 V
CategoryIndustrial & Scientific
MPNAPT75GN60LDQ3G
Product groupBISS
Product typeBISS
ManufacturerMICROSEMI
View on Amazon (paid link)