Avago . ATF-35143-TR1G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 09X1760 | 1 | 1 | ||
| JT25-ATF-35143-TR1G | 1 | 208 | 1 | ||
| Freelance Electronics | ATF-35143-TR1G | 1 | 1 | 1 @ $0.30 | |
| 1Source | ATF-35143-TR1G | 1 | 1 | ||
| Digi-Key | 1966546 | 1 | 1 | ||
![]() Radwell | ATF-35143-TR1G | 3000 | 3000 | 1 @ $1.35 | |
| Hotenda | H1911657 | 1 | 3000 | 1 | 1 @ $0.71 |
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Transistors RF JFET Transistor GaAs Low Noise (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-35143-TR1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs Low Noise (100 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-35143-TR1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs Low Noise (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-35143-TR1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs Low Noise (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-35143-TR1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
ATF-35143-TR1G
Brand: AVAGO TECHNOLOGIES
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | Electronic Components |
| Part number | ATF-35143-TR1G |
| Label | Avago Technologies |
| Manufacturer | Avago Technologies |
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs pHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 120 mmho Drain Source Voltage VDS: 5.5 V Gate-Source Breakdown Voltage: - 5 V Continuous Drain Current: 80 mA Frequency: 2 GHz Gain: 18 dB Power Dissipation: 300 mW Maximum Operating Temperature: + 160 C Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-35143-TR1G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
