Avago . ATF-501P8-BLK
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 54K2738 | 1 | 1 | ||
| 1Source | ATF-501P8-BLK | 1 | 1 | ||
| Digi-Key | 827824 | 1 | 1 | ||
![]() Radwell | ATF-501P8-BLK | 200 | 200 | 1 @ $6.99 | |
| Hotenda | H1911810 | 1 | 990 | 1 | 1 @ $6.47, 10 @ $5.81, 100 @ $4.76, 500 @ $4.05 |
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Transistors RF JFET Transistor GaAs High Linearity (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 1872 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15 dB Power Dissipation: 3.5 W Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-501P8-BLK |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs High Linearity (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 1872 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15 dB Power Dissipation: 3.5 W Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-501P8-BLK |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs High Linearity (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 1872 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15 dB Power Dissipation: 3.5 W Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-501P8-BLK |
| Product group | Pet Products |
| Product type | PET_SUPPLIES |
| Manufacturer | Avago Technologies |
Transistors RF JFET Transistor GaAs High Linearity (1 piece)
Brand: AVAGO TECHNOLOGIES
Catalog
| Feature | Manufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Forward Transconductance - Min: 1872 mmho Drain Source Voltage VDS: 7 V Gate-Source Breakdown Voltage: - 5 V to 0.8 V Maximum Drain Gate Voltage: - 5 V to + 1 V Continuous Drain Current: 1 A Frequency: 2 GHz Gain: 15 dB Power Dissipation: 3.5 W Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | ATF-501P8-BLK |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Avago Technologies |
