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BROADCOM . ATF-54143-TR1G

Attributes

Brand name, Manufacturer nameBROADCOM
ManufacturerBROADCOM Avago Technologies
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberATF-54143-TR1G
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB00M1TCCL8
AsinB00LWSA086 B00LWSA1NU B00LWSA2TS B00LWSA450 B00M1TCCL8
BrandAVAGO TECHNOLOGIES
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 630-ATF-54143-TR1G X1 MS 630-ATF-54143-TR1G X10 MS 630-ATF-54143-TR1G X100 MS 630-ATF-54143-TR1G X5 MS 630-ATF-54143-TR1G X50
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
FetchTime1565029769
Height60
Label, Man, Publisher, StudioAvago Technologies
ModelElectronic Components
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT
TitleATF-54143-TR1G Transistors RF JFET Transistor GaAs Single Voltage (1 piece) Transistors RF JFET Transistor GaAs Single Voltage (10 pieces) Transistors RF JFET Transistor GaAs Single Voltage (100 pieces) Transistors RF JFET Transistor GaAs Single Voltage (5 pieces) Transistors RF JFET Transistor GaAs Single Voltage (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/319nJffdI7L._SL75_.jpg
Unitspixels pounds
Weight0.000625
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark96K651211
Newark63J888811
4 Star ElectronicsATF54143TR1G11
jotrin.comJT25-ATF-54143-TR1G1750391
1SourceATF-54143-TR1G11
Digi-Key113718011
RadwellATF-54143-TR1G111 @ $4.26
HotendaH19115861600011 @ $1.88

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Transistors RF JFET Transistor GaAs Single Voltage (10 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (100 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (5 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
Transistors RF JFET Transistor GaAs Single Voltage (50 pieces)
Brand: AVAGO TECHNOLOGIES
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)
ATF-54143-TR1G
Brand: AVAGO TECHNOLOGIES
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelElectronic Components
Part numberATF-54143-TR1G
LabelAvago Technologies
ManufacturerAvago Technologies
Catalog
FeatureManufacturer: Avago Technologies Product Category: Transistors RF JFET RoHS: Type: GaAs EpHEMT Transistor Polarity: N-Channel Forward Transconductance - Min: 410 mmho Drain Source Voltage VDS: 5 V Gate-Source Breakdown Voltage: - 5 V to 1 V Continuous Drain Current: 120 mA Frequency: 2 GHz Gain: 16.6 dB Power Dissipation: 725 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNATF-54143-TR1G
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerAvago Technologies
View on Amazon (paid link)