NEXPERIA . BSH111,215
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 75R4689 | 1 | 1 | ||
| Little Diode | BSH111215 | 1 | 1 | ||
![]() Radwell | BSH111215 | 12000 | 12000 | ||
| 1Source | BSH111,215 | 1 | 1 | ||
| Digi-Key | 763484 | 1 | 1 | ||
| Digi-Key | 13469602 | 1 | 372683 | 1 | 5770 @ $0.05 |
| 509-314 | 1 | 1 | |||
| Win Source | BSH111,215 | 567 | 357000 | 567 | 567 @ $0.06, 2 @ $0.06, 6 @ $0.05 |
| Hotenda | H1833372 | 1 | 1 | ||
| Rochester Electronics | BSH111215 | 16550 | 1 @ $0.09, 25 @ $0.08, 100 @ $0.08, 500 @ $0.08, 1000 @ $0.07 | ||
| Abacus Technologies | BSH111215 | 8546 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
NXP BSH111,215 MOSFET, N CH, 55V, 335MA, 3-SOT-23 (1000 pieces)
Brand: NXP
Catalog
| Feature | Price For: Each |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP |
NXP BSH111,215 MOSFET, N CH, 55V, 335MA, 3-SOT-23 (500 pieces)
Brand: NXP
Catalog
| Feature | Price For: Each |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP |
NXP BSH111,215 MOSFET, N CH, 55V, 335MA, 3-SOT-23 (5000 pieces)
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | BSH111,215 |
| Manufacturer | NXP |
MOSFET N-CH TRNCH 55V 335MA (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (1000 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH TRNCH 55V 335MA (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Single RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 335 mA Rds On - Drain-Source Resistance: 2.4 Ohms Configuration: Single Qg - Gate Charge: 0.05 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 0.83 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSH111,215 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
