BSS670S2LH6327XT INFINEON Transistors - Jotrin Electronics
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| JT25-BSS670S2LH6327XT | 1 | 48000 | 1 | ||
![]() swatee.com | BSS670S2LH6327XT | 1 | 19864 | 1 | 1 @ $1.18 |
| 1Source | BSS670S2LH6327XT | 1 | 1 |
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MOSFET N-Ch 55V 540mA SOT-23-3 (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 540 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 55 V <b>Rds On - Drain-Source Resistance</b>: 650 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 2.26 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 360 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSS670S2LH6327XT |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 55V 540mA SOT-23-3 (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 540 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 55 V <b>Rds On - Drain-Source Resistance</b>: 650 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 2.26 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 360 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSS670S2LH6327XT |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 55V 540mA SOT-23-3 (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 540 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 55 V <b>Rds On - Drain-Source Resistance</b>: 650 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 2.26 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 360 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSS670S2LH6327XT |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 55V 540mA SOT-23-3 (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 540 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 55 V <b>Rds On - Drain-Source Resistance</b>: 650 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 2.26 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 360 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSS670S2LH6327XT |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
MOSFET N-Ch 55V 540mA SOT-23-3 (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 540 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 55 V <b>Rds On - Drain-Source Resistance</b>: 650 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Qg - Gate Charge</b>: 2.26 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 360 mW |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSS670S2LH6327XT |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Infineon Technologies |
