INFINEON . BSV236SPH6327XT
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| 1Source | BSV236SPH6327XT | 1 | 1 |
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MOSFET OptiMOS -P Small Signal Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (1000 pieces)
Brand: Infineon Technologies
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (500 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET OptiMOS -P Small Signal Transistor (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: +/- 12 V Id - Continuous Drain Current: - 1.5 A Rds On - Drain-Source Resistance: 175 mOhms Configuration: Single Qg - Gate Charge: - 3. 8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 560 mW Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSV236SPH6327XT |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |