As an Amazon Associate, we earn from qualifying purchases.

Infineon BSZ018NE2LSIXT

Infineon . BSZ018NE2LSIXT

Gallery

Attributes

Brand name, Manufacturer name, Attribute01Infineon
ManufacturerInfineon Infineon Technologies
Attribute0020 V
Attribute0226 ns
Attribute0340 A
Attribute04726-BSZ018NE2LSIATMA
Attribute05BSZ018NE2
Attribute06N-Channel
Attribute07, MPN, SKU, Part Number, PartNumberBSZ018NE2LSIXT
Attribute08SMD/SMT
Attribute09TSDSON-8
Attribute10MOSFET
Attribute1125 V
Attribute12Single Quad Drain Triple Source
Attribute13Reel
Attribute141.2 V to 2 V
Attribute15140 S
Attribute16, Brand, Label, Man, Publisher, StudioInfineon Technologies
Attribute17- 55 C
Attribute181.8 mOhms
Attribute19BSZ018NE2LSIATMA1 SP000906032
Attribute2069 W
Attribute214.4 ns
Attribute22OptiMOS
Attribute233.4 ns
Attribute24+ 150 C
Attribute2539 nC
AttributeKey00Vgs - Gate-Source Breakdown Voltage
AttributeKey01Manufacturer
AttributeKey02Typical Turn-Off Delay Time
AttributeKey03Id - Continuous Drain Current
AttributeKey04Alternate Part No.
AttributeKey05Series
AttributeKey06Transistor Polarity
AttributeKey07Manufacturer Part No.
AttributeKey08Mounting Style
AttributeKey09Package/Case
AttributeKey10Product Category
AttributeKey11Vds - Drain-Source Breakdown Voltage
AttributeKey12Configuration
AttributeKey13Packaging
AttributeKey14Vgs th - Gate-Source Threshold Voltage
AttributeKey15Forward Transconductance - Min
AttributeKey16Brand
AttributeKey17Minimum Operating Temperature
AttributeKey18Rds On - Drain-Source Resistance
AttributeKey19Part # Aliases
AttributeKey20Pd - Power Dissipation
AttributeKey21Rise Time
AttributeKey22Tradename
AttributeKey23Fall Time
AttributeKey24Maximum Operating Temperature
AttributeKey25Qg - Gate Charge
Extra Product NameInfineon BSZ018NE2LSIXT
moq, multiple, tierMinQty11
qtyInStock164
tierPrice14.29
Product Group, ProductGroupBISS
AsinB00LWO4UV8 B00LWO4X24 B00LWO4ZDQ B00M2DRTWU
Case, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-BSZ018NE2LSIATMA X1 MS 726-BSZ018NE2LSIATMA X10 MS 726-BSZ018NE2LSIATMA X5 MS 726-BSZ018NE2LSIATMA X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 1.8 mOhms Configuration: Single Quad Drain Triple Source Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece 50 Piece
TitleMOSFET OptiMOS Power MOSFET (1 piece) MOSFET OptiMOS Power MOSFET (10 pieces) MOSFET OptiMOS Power MOSFET (5 pieces) MOSFET OptiMOS Power MOSFET (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
swatee.comBSZ018NE2LSIXT116411 @ $4.29
1SourceBSZ018NE2LSIXT11

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET OptiMOS Power MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 1.8 mOhms Configuration: Single Quad Drain Triple Source Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC
CategoryIndustrial & Scientific
MPNBSZ018NE2LSIXT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS Power MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 1.8 mOhms Configuration: Single Quad Drain Triple Source Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC
CategoryIndustrial & Scientific
MPNBSZ018NE2LSIXT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS Power MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 1.8 mOhms Configuration: Single Quad Drain Triple Source Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC
CategoryIndustrial & Scientific
MPNBSZ018NE2LSIXT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS Power MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 25 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 40 A Rds On - Drain-Source Resistance: 1.8 mOhms Configuration: Single Quad Drain Triple Source Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC
CategoryIndustrial & Scientific
MPNBSZ018NE2LSIXT
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)