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BUK652R7-30C,127 NXP USA Inc. | Discrete Semiconductor Products | DigiKey

NXP USA Inc. . BUK652R7-30C,127

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Attributes

Brand name, Manufacturer name, Attribute01, Attribute06NXP USA Inc.
ManufacturerNXP USA Inc. NXP Semiconductors
Attribute00568-7494-5-ND
Attribute02, MPN, Part Number, PartNumberBUK652R7-30C,127
Attribute03MOSFET N-CH 30V 100A TO220AB
Attribute04, snippetN-Channel 30 V 100A (Tc) 204W (Tc) Through Hole TO-220AB
Attribute05, CategoryL1Discrete Semiconductor Products
Attribute07TrenchMOS?
Attribute08Tube
Attribute09Obsolete
Attribute10N-Channel
Attribute11MOSFET (Metal Oxide)
Attribute1230 V
Attribute13100A (Tc)
Attribute144.5V, 10V
Attribute153.3mOhm @ 25A, 10V
Attribute162.8V @ 1mA
Attribute17114 nC @ 10 V
Attribute18?16V
Attribute196960 pF @ 25 V
Attribute20-
Attribute21204W (Tc)
Attribute22-55?C ~ 175?C (TJ)
Attribute23Through Hole
Attribute24TO-220AB
Attribute25TO-220-3
Attribute26BUK65
AttributeKey00Digi-Key Part Number
AttributeKey01Manufacturer
AttributeKey02Manufacturer Product Number
AttributeKey03Description
AttributeKey04Detailed Description
AttributeKey05Category
AttributeKey06Mfr
AttributeKey07Series
AttributeKey08Package
AttributeKey09Product Status
AttributeKey10FET Type
AttributeKey11Technology
AttributeKey12Drain to Source Voltage (Vdss)
AttributeKey13Current - Continuous Drain (Id) @ 25?C
AttributeKey14Drive Voltage (Max Rds On, Min Rds On)
AttributeKey15Rds On (Max) @ Id, Vgs
AttributeKey16Vgs(th) (Max) @ Id
AttributeKey17Gate Charge (Qg) (Max) @ Vgs
AttributeKey18Vgs (Max)
AttributeKey19Input Capacitance (Ciss) (Max) @ Vds
AttributeKey20FET Feature
AttributeKey21Power Dissipation (Max)
AttributeKey22Operating Temperature
AttributeKey23Mounting Type
AttributeKey24Supplier Device Package
AttributeKey25Package / Case
AttributeKey26Base Product Number
CategoryL2Transistors
CategoryL3FETs, MOSFETs
Extra Product NameBUK652R7-30C,127 NXP USA Inc. | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, Case, NumberOfItems1
extraShipping, qtyInStock0
SKU2606338
Product Group, ProductGroupBISS
AsinB00HKZ3SDE
Brand, Label, Man, Publisher, StudioNXP Semiconductors
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
Feature<b>Manufacturer</b>: NXP <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 30 V <b>Gate-Source Breakdown Voltage</b>: +/- 20 V <b>Continuous Drain Current</b>: 100 A <b>Drain-Source On Resistance</b>: 2.7 mOhms <b>Configuration</b>: Single <b>Maximum Operating Temperature</b>: + 175 C <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: TO-220AB <b>Packaging</b>: Tube <b>Minimum Operating Temperature</b>: - 55 C <b>Power Dissipation</b>: 204 W
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET N-CHAN 30V 100A

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key260633811
1SourceBUK652R7-30C,12711
Win SourceBUK652R7-30C,1271650001
HotendaH183319211

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MOSFET N-CHAN 30V 100A
Brand: NXP Semiconductors
Catalog
Feature<b>Manufacturer</b>: NXP <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 30 V <b>Gate-Source Breakdown Voltage</b>: +/- 20 V <b>Continuous Drain Current</b>: 100 A <b>Drain-Source On Resistance</b>: 2.7 mOhms <b>Configuration</b>: Single <b>Maximum Operating Temperature</b>: + 175 C <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: TO-220AB <b>Packaging</b>: Tube <b>Minimum Operating Temperature</b>: - 55 C <b>Power Dissipation</b>: 204 W
CategoryIndustrial & Scientific
MPNBUK652R7-30C,127
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
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