NEXPERIA . BUK9832-55A,115
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 79R1863 | 1 | 1 | ||
| Little Diode | BUK983255A115 | 1 | 1 | ||
| 1Source | BUK9832-55A,115 | 1 | 1 | ||
| Digi-Key | 2762722 | 1 | 1 | ||
![]() Radwell | BUK983255A115 | 1 | 1 | 1 @ $1.80 | |
| Hotenda | H1812247 | 1 | 1 |
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MOSFET TAPE-7 PWR-MOS
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (1000 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE-7 PWR-MOS (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8 W Mounting Style: SMD/SMT Package / Case: SC-73-4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9832-55A,115 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
