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NEXPERIA . BUK9Y40-55B,115

Attributes

Brand name, Manufacturer nameNEXPERIA
Manufacturer, Brand, Label, Man, Publisher, StudioNEXPERIA NXP Semiconductors
extendedQty, qtyInStock0
moq, multiple, Item_package_quantity1
MPN, Part Number, Model, ModelNumber, Model_number, PartNumber, Part_numberBUK9Y40-55B,115
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB076F9LKZS
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB00HKZ2WL8 B00LWP25L4 B00LWP2C9E B00LWP2FUK B00LWP2K7S B076F9LKZS
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 36 m? QgGateCharge: 11 nC RatedPowerDissipation(P): 59 W VoltageDraintoSource: 55 V
Case1 10 100 1500 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 771-BUK9Y40-55B115 X1 MS 771-BUK9Y40-55B115 X10 MS 771-BUK9Y40-55B115 X100 MS 771-BUK9Y40-55B115 X5 MS 771-BUK9Y40-55B115 X50
ClassificationId306919011
DisplayNameMOSFET
FeatureChannelType: N-Channel Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
FetchTime1626257320 1651873496 1672517120 1690053500 1714723469
Height243 56
ItemClassificationBASE_PRODUCT
ItemName, Item_nameNEXPERIA BUK9Y40-55B,115 BUK9Y40-55B Series 55 V 36 mOhm N-Channel TrenchMOS logic Level FET - LFPAK-4 - 1500 item(s)
Item_type_keywordmosfet-transistors
Item_weight0.26
KeywordBUK9Y40-55B
Linkhttps://m.media-amazon.com/images/I/21yaTGuGtjL._SL75_.jpg https://m.media-amazon.com/images/I/21yaTGuGtjL.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items1500
PackageQuantity1 10 100 5 50
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionBUK9Y40-55B Series 55 V 36 mOhm N-Channel TrenchMOS logic Level FET - LFPAK-4 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-10-13T15:10:53.781Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET TRENCH 31V-99V G3 (1 piece) MOSFET TRENCH 31V-99V G3 (10 pieces) MOSFET TRENCH 31V-99V G3 (100 pieces) MOSFET TRENCH 31V-99V G3 (5 pieces) MOSFET TRENCH 31V-99V G3 (50 pieces) NEXPERIA BUK9Y40-55B,115 BUK9Y40-55B Series 55 V 36 mOhm N-Channel TrenchMOS logic Level FET - LFPAK-4 - 1500 item(s)
URLhttps://m.media-amazon.com/images/I/21yaTGuGtjL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0005732018812
Width323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark70R352511
Digi-Key116364611245811 @ $0.85, 10 @ $0.74, 100 @ $0.57, 500 @ $0.45, 1500 @ $0.36, 3000 @ $0.33, 7500 @ $0.30, 10500 @ $0.29
1SourceBUK9Y40-55B,11511
iodPartsBUK9Y40-55B,1151500150015001500 @ $0.18
Win SourceBUK9Y40-55B,115115001
HotendaH18153221900011 @ $0.22
Digi-Key568-6237-1-ND111 @ $0.58, 10 @ $0.49, 100 @ $0.37, 500 @ $0.29

Related on Amazon

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MOSFET TRENCH 31V-99V G3 (1 piece)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET TRENCH 31V-99V G3 (10 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET TRENCH 31V-99V G3 (100 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET TRENCH 31V-99V G3 (5 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET TRENCH 31V-99V G3 (50 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 15 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 36 mOhms Configuration: Single Triple Source Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 59 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
NEXPERIA BUK9Y40-55B,115 BUK9Y40-55B Series 55 V 36 mOhm N-Channel TrenchMOS logic Level FET - LFPAK-4 - 1500 item(s)
Brand: NEXPERIA
BUK9Y40-55B Series 55 V 36 mOhm N-Channel TrenchMOS logic Level FET - LFPAK-4 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 55 V
  • Drain-sourceOnResistance-Max: 36 m?
  • QgGateCharge: 11 nC
  • RatedPowerDissipation(P): 59 W
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelBUK9Y40-55B,115
Part numberBUK9Y40-55B,115
Items per pack1500
LabelNEXPERIA
ManufacturerNEXPERIA
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNBUK9Y40-55B,115
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNEXPERIA
View on Amazon (paid link)