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Diodes Inc. Mosfet, P-Ch, 30V, 12A, Soic Rohs Compliant: Yes - DMG4413LSS-13

DIODES INC. . DMG4413LSS-13

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Attributes

Brand name, Manufacturer nameDIODES INC.
ManufacturerDIODES INC. DIODES Diodes Incorporated
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameDiodes Inc. Mosfet, P-Ch, 30V, 12A, Soic Rohs Compliant: Yes - DMG4413LSS-13
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, tierMinQty1, tierPrice1, Item_package_quantity1
MPN, Part Number, Keyword, Model, ModelNumber, Model_number, PartNumber, Part_numberDMG4413LSS-13
qtyInStock2500
SKU28AK8411
tierMinQty210
tierMinQty325
tierMinQty450
tierMinQty5100
tierMinQty6250
tierMinQty7500
tierMinQty81000
tierPrice20.831
tierPrice30.774
tierPrice40.717
tierPrice50.66
tierPrice60.614
tierPrice70.567
tierPrice80.472
urlhttps://www.newark.com/28AK8411?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB00M1SF04A B06XDMQ35B B07BZX5F6P
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB00LVMI65W B00LVMI7BK B00LVMI8IW B00LVMI9PO B00LVMIASK B00M1SF04A B06XDMQ35B B07BZX5F6P
BindingTools & Home Improvement
Brand, Label, Publisher, StudioDIODES Diodes Incorporated
Bullet_pointChannelType: P-Ch Drain-sourceOnResistance-Max: 7.5 m? Noofchannels: 1 RatedPowerDissipation(P): 1.7 WQgGateCharge: 46 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 12 A; Turn-onTime-Nom(ton): 15 ns; Turn-offTime-Nom(toff): 160 ns; RiseTIme: 9 ns; FallTime: 66 ns; OperatingTempRange: -55 to +150 °C; VoltageDraintoSource: 30 V
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 621-DMG4413LSS-13 X1 MS 621-DMG4413LSS-13 X10 MS 621-DMG4413LSS-13 X100 MS 621-DMG4413LSS-13 X5 MS 621-DMG4413LSS-13 X50 MS 621-DMG4413LSS-13 X500
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier4550034607127
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
FetchTime1553553297 1674141560 1699828641 1715027047
Height1.968503935 243 5.0 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameDIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 25 item(s) DIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 2500 item(s)
Item_package_weight0.3
Item_type_keywordmosfet-transistors
Item_weight0.2
Length10.0 3.93700787 3.937007870
Linkhttps://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL.jpg
ManDiodes Incorporated
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items25 2500
OldTitleMOSFET MOSFET,P-CHANNEL (1 piece)
ProductGroupBISS BISS Basic
ProductTypeELECTRONIC_COMPONENT
ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionDMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2018-01-12T21:37:25.087Z 2018-04-06T17:03:28.802Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleDIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 25 item(s) DIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 2500 item(s) MOSFET MOSFET,P-CHANNEL MOSFET MOSFET,P-CHANNEL (10 pieces) MOSFET MOSFET,P-CHANNEL (100 pieces) MOSFET MOSFET,P-CHANNEL (5 pieces) MOSFET MOSFET,P-CHANNEL (50 pieces) MOSFET MOSFET,P-CHANNEL (500 pieces)
TitleSourcelistings feed
Typeean
URLhttp://ecx.images-amazon.com/images/I/11i2YFHm0qL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg
Unitcentimeters inches kilograms pounds
Unitsinches pixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.440924524 0.661386786
Width10.0 3.93700787 3.937007870 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark28AK84111250011 @ $1.00, 10 @ $0.83, 25 @ $0.77, 50 @ $0.72, 100 @ $0.66, 250 @ $0.61, 500 @ $0.57, 1000 @ $0.47
jotrin.comJT25-DMG4413LSS-1311551
TMEDMG4413LSS-1311
Allied Electronics704380405010
RS Delivers751-4102111 @ $1.07
Digi-Key2279224111 @ $1.14, 10 @ $1.02, 100 @ $0.79, 500 @ $0.66, 1000 @ $0.52
Mouser621-DMG4413LSS-13111 @ $1.05, 10 @ $0.94, 100 @ $0.73, 1000 @ $0.48, 10000 @ $0.41
Future Electronics6016772250025002500 @ $0.35, 5000 @ $0.27, 7500 @ $0.27, 10000 @ $0.27
Win SourceDMG4413LSS-13115600115115 @ $0.43, 300 @ $0.34, 1 @ $0.29
HotendaH18122291253511 @ $0.88, 10 @ $0.79, 100 @ $0.62, 500 @ $0.51
1SourceDMG4413LSS-1311

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MOSFET MOSFET,P-CHANNEL (10 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET MOSFET,P-CHANNEL (100 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET MOSFET,P-CHANNEL (5 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET MOSFET,P-CHANNEL (50 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET MOSFET,P-CHANNEL (500 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeBISS
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET MOSFET,P-CHANNEL
Brand: Diodes Incorporated
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberDMG4413LSS-13
LabelDiodes Incorporated
ManufacturerDiodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: - 10.5 A Drain-Source On Resistance: 6.3 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOP-8 Packaging: Reel Forward Transconductance - Min: 26 S Gate Charge Qg: 46 nC
CategoryIndustrial & Scientific
MPNDMG4413LSS-13
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
DIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 2500 item(s)
Brand: DIODES
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: P-Ch
  • Noofchannels: 1
  • VoltageDraintoSource: 30 V
  • Drain-sourceOnResistance-Max: 7.5 m?
  • RatedPowerDissipation(P): 1.7 WQgGateCharge: 46 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 12 A; Turn-onTime-Nom(ton): 15 ns; Turn-offTime-Nom(toff): 160 ns; RiseTIme: 9 ns; FallTime: 66 ns; OperatingTempRange: -55 to +150 °C;
Listing
BindingTools & Home Improvement
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelDMG4413LSS-13
Part numberDMG4413LSS-13
Items per pack2500
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)
DIODES DMG4413LSS-13 DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 - 25 item(s)
Brand: DIODES
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelDMG4413LSS-13
Part numberDMG4413LSS-13
Items per pack25
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)