Diodes Inc. Mosfet N-Ch 30V 10A To252-3 - DMG4800LK3-13
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 40AJ6048 | 1 | 1 | 1 @ $0.69, 10 @ $0.60, 100 @ $0.44, 500 @ $0.35, 1000 @ $0.33 | |
| DMG4800LK3-13 | 3 | 3 | 3 @ $0.32, 25 @ $0.25, 100 @ $0.22, 500 @ $0.20, 2500 @ $0.19 | ||
| Digi-Key | 2192617 | 1 | 1 | 1 @ $0.72, 10 @ $0.62, 100 @ $0.47, 500 @ $0.37, 1000 @ $0.28 | |
![]() swatee.com | DMG4800LK3-13 | 1 | 1467 | 1 | 1 @ $1.00 |
| iodParts | DMG4800LK3-13 | 1 | 5472 | 1 | |
| Win Source | DMG4800LK3-13 | 1 | 614 | 1 | |
| Hotenda | H1811559 | 1 | 1 | 1 @ $0.19 | |
| 1Source | DMG4800LK3-13 | 1 | 1 | ||
| Future Electronics | 5082330 | 2500 | 2500 | 2500 @ $0.13, 7500 @ $0.13 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 10 A Drain-Source On Resistance: 12 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 8.55 ns Forward Transconductance - Min: 10 S Gate Charge Qg: 8.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMG4800LK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 10 A Drain-Source On Resistance: 12 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 8.55 ns Forward Transconductance - Min: 10 S Gate Charge Qg: 8.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMG4800LK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 10 A Drain-Source On Resistance: 12 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 8.55 ns Forward Transconductance - Min: 10 S Gate Charge Qg: 8.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMG4800LK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 10 A Drain-Source On Resistance: 12 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 8.55 ns Forward Transconductance - Min: 10 S Gate Charge Qg: 8.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMG4800LK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A (1 piece)
Brand: Diodes Incorporated
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | DMG4800LK3-13 |
| Label | Diodes Incorporated |
| Manufacturer | Diodes Incorporated |
Catalog
| Feature | Manufacturer: Diodes Incorporated Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 10 A Drain-Source On Resistance: 12 mOhms Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TO-252-3 Packaging: Reel Fall Time: 8.55 ns Forward Transconductance - Min: 10 S Gate Charge Qg: 8.7 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMG4800LK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |
