Diodes Inc. Mosfet, N-Ch, 100V, 12A, To-252 Rohs Compliant: Yes - DMN10H170SK3-13
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 28AK8461 | 1 | 2515 | 1 | 1 @ $0.48, 10 @ $0.42, 25 @ $0.38, 50 @ $0.34, 100 @ $0.30, 250 @ $0.28, 500 @ $0.26, 1000 @ $0.24 |
![]() jotrin.com | JT25-DMN10H170SK3-13 | 1 | 20000 | 1 | |
| TME | DMN10H170SK3-13 | 1 | 1 | 1 @ $0.96, 5 @ $0.41, 25 @ $0.36, 100 @ $0.32, 500 @ $0.29 | |
| Digi-Key | 3720114 | 1 | 1 | 1 @ $0.75, 10 @ $0.66, 100 @ $0.50, 500 @ $0.40, 1000 @ $0.32, 2500 @ $0.29, 5000 @ $0.27 | |
| Win Source | DMN10H170SK3-13 | 1 | 1 | 1 | |
| Hotenda | H1811676 | 1 | 5000 | 1 | 1 @ $0.22 |
| 1Source | DMN10H170SK3-13 | 1 | 1 |
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MOSFET N-CH 100V 12A TO252 (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 100V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 140 mOhm @ 5A, 10V <b>Vgs(th) (Max) @ Id:</b> 3V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 9.7nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 1167pF @ 25V <b>Power - Max:</b> 42W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN10H170SK3-13 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 100V 12A TO252 (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 100V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 140 mOhm @ 5A, 10V <b>Vgs(th) (Max) @ Id:</b> 3V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 9.7nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 1167pF @ 25V <b>Power - Max:</b> 42W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN10H170SK3-13 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET N-CH 100V 12A TO252 (100 pieces)
Brand: Diodes Incorporated
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Part number | DMN10H170SK3-13 |
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 100V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 12A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 140 mOhm @ 5A, 10V <b>Vgs(th) (Max) @ Id:</b> 3V @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 9.7nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 1167pF @ 25V <b>Power - Max:</b> 42W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN10H170SK3-13 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
DIODES DMN10H170SK3-13 N-Channel 100 V 140 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3 - 2500 item(s)
Brand: DIODES
N-Channel 100 V 140 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 100 V
- Drain-sourceOnResistance-Max: 140 mΩ
- QgGateCharge: 9.7 nC
- RatedPowerDissipation(P): 42 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | DMN10H170SK3-13 |
| Part number | DMN10H170SK3-13 |
| Items per pack | 2500 |
| Label | DIODES |
| Manufacturer | DIODES |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN10H170SK3-13 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | DIODES INC. |
