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Diodes Inc. Mosfet, N-Ch, 30V, 5.3A, Powerdi 3333 Rohs Compliant: Yes - DMN3030LFG-7

DIODES INC. . DMN3030LFG-7

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Attributes

Brand name, Manufacturer nameDIODES INC.
ManufacturerDIODES INC. Diodes Incorporated
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameDiodes Inc. Mosfet, N-Ch, 30V, 5.3A, Powerdi 3333 Rohs Compliant: Yes - DMN3030LFG-7
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple5
MPN, Part Number, PartNumberDMN3030LFG-7
qtyInStock0
SKU28AK8549
tierMinQty11
tierMinQty210
tierMinQty325
tierMinQty450
tierMinQty5100
tierMinQty6250
tierMinQty7500
tierMinQty81000
tierPrice10.5
tierPrice20.433
tierPrice30.397
tierPrice40.36
tierPrice50.324
tierPrice60.29
tierPrice70.255
tierPrice80.197
urlhttps://www.newark.com/28AK8549?CMP=AFC-DATAALCHEMY
AsinB00LVMBFJQ B00LVMBGTU B00LVMBIC0 B00LVMBJWE B00LVMBKXW B00M1SQ0MQ
Brand, Label, Man, Publisher, StudioDiodes Incorporated
Case1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 621-DMN3030LFG-7 X1 MS 621-DMN3030LFG-7 X10 MS 621-DMN3030LFG-7 X100 MS 621-DMN3030LFG-7 X5 MS 621-DMN3030LFG-7 X50
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
PackageQuantity1 10 100 5 50
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (1 piece) MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (10 pieces) MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (100 pieces) MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (5 pieces) MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (50 pieces) MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark28AK8549551 @ $0.50, 10 @ $0.43, 25 @ $0.40, 50 @ $0.36, 100 @ $0.32, 250 @ $0.29, 500 @ $0.26, 1000 @ $0.20
Digi-Key7725069200020002000 @ $0.21
swatee.comDMN3030LFG-7180111 @ $1.04
HotendaH18171101200011 @ $0.15
1SourceDMN3030LFG-711

Related on Amazon

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MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (10 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (100 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (5 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (50 pieces)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (500 pieces)
Catalog
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
ManufacturerDiodes Incorporated
View on Amazon (paid link)
MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS (1 piece)
Brand: Diodes Incorporated
Catalog
FeatureManufacturer: Diodes Incorporated RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Continuous Drain Current: 5.3 A Drain-Source On Resistance: 27 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: PowerDI3333-8 Packaging: Reel Fall Time: 6.3 ns Gate Charge Qg: 17.4 nC Minimum Operating Temperature: - 55 C
CategoryIndustrial & Scientific
MPNDMN3030LFG-7
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerDiodes Incorporated
View on Amazon (paid link)