Diodes Inc. Mosfet, N-Ch, 30V, 0.26A, Sot-363 - DMN63D8LDW-7
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 82Y6580 | 5 | 52599 | 5 | 1 @ $0.19, 10 @ $0.13, 25 @ $0.11, 50 @ $0.09, 100 @ $0.07 |
![]() jotrin.com | JT25-DMN63D8LDW-7 | 1 | 10000 | 1 | |
| DMN63D8LDW-7 | 1 | 1 | |||
| DMN63D8LDW-7 | 5 | 2965 | 5 | 5 @ $0.19, 25 @ $0.07, 100 @ $0.06, 500 @ $0.06, 3000 @ $0.05 | |
| 3829369 | 1 | 175983 | 1 | 1 @ $0.37, 10 @ $0.31, 100 @ $0.16, 500 @ $0.11, 1000 @ $0.07, 3000 @ $0.07, 6000 @ $0.06, 15000 @ $0.05, 30000 @ $0.04, 75000 @ $0.04 | |
| Allied Electronics | 70551252 | 500 | 100 | ||
| RS Delivers | 822-2598P | 1 | 1 | 1 @ $0.15 | |
| AmazonSC | B06XD6KBML | 1 | 1 | 1 @ $257.37 | |
![]() AmazonTP | B07NDKJZ2Z | 1 | 1 | 1 @ $22.40 | |
![]() AmazonTP | B06XD6KBML | 1 | 1 | 1 @ $257.37 | |
| 1Source | DMN63D8LDW-7 | 1 | 1 | ||
| Future Electronics | 5042164 | 3000 | 2999 | 3000 | 3000 @ $0.04 |
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MOSFET 30V DUAL N-CH MOSFET (1 piece)
Brand: Diodes Incorporated
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Diodes Incorporated <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 260 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 2.8 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1.5 V <b>Qg - Gate Charge</b>: 0.87 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN63D8LDW-7 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V DUAL N-CH MOSFET (10 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Diodes Incorporated <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 260 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 2.8 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1.5 V <b>Qg - Gate Charge</b>: 0.87 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN63D8LDW-7 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V DUAL N-CH MOSFET (100 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Diodes Incorporated <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 260 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 2.8 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1.5 V <b>Qg - Gate Charge</b>: 0.87 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN63D8LDW-7 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V DUAL N-CH MOSFET (5 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Diodes Incorporated <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 260 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 2.8 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1.5 V <b>Qg - Gate Charge</b>: 0.87 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN63D8LDW-7 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
MOSFET 30V DUAL N-CH MOSFET (50 pieces)
Brand: Diodes Incorporated
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Diodes Incorporated <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 260 mA <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 2.8 Ohms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1.5 V <b>Qg - Gate Charge</b>: 0.87 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | DMN63D8LDW-7 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Diodes Incorporated |
DIODES DMN63D8LDW-7 Dual N-Channel 30 V 2.8 ? 0.3 W SMT Enhancement Mode MosFet - SOT-363 - 3000 item(s)
Brand: DIODES
Dual N-Channel 30 V 2.8 ? 0.3 W SMT Enhancement Mode MosFet - SOT-363 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Channel
- VoltageDraintoSource: 30 V
- Drain-sourceOnResistance-Max: 2.8 Ω
- QgGateCharge: 0.87 nC
- RatedPowerDissipation(P): 0.3 W
Listing
| Binding | Tools & Home Improvement |
|---|---|
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Model | DMN63D8LDW-7 |
| Part number | DMN63D8LDW-7 |
| Items per pack | 3000 |
| Label | DIODES |
| Manufacturer | DIODES |
DMN63D8LDW-7, Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R (50 Items)
Brand: Diodes Incorporated
DMN63D8LDW-7, Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R (50 items)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | DMN63D8LDW-7 |
| Part number | DMN63D8LDW-7 |
| Items per pack | 50 |
| Label | Diodes Incorporated |
| Manufacturer | Diodes Incorporated |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | DMN63D8LDW-7 |
| EAN | 7039791566962 |
| Product group | BISS Basic |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Diodes Incorporated |


