Infineon Igbt Module - FF650R17IE4
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 84R7186 | 1 | 1 | 1 @ $0.00 | |
| JT25-FF650R17IE4 | 1 | 100 | 1 | ||
 Galco | FF650R17IE4-EUPC | 9 | 9 | 1 @ $546.78 | |
 Radwell | FF650R17IE4 | 1 | 1 | ||
| 1Source | FF650R17IE4 | 1 | 1 |
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INFINEON FF650R17IE4 IGBT Module
Brand: Infineon
Catalog
| Feature | Price For: Each Transistor Polarity: N Channel DC Collector Current: 650A Collector Emitter Voltage Vces: 1.7kV Power Dissipation Pd: 4.15kW Collector Emitter Voltage V(br)ceo: 1.7kV Operating Temperature Min: -40\xb0C No. of Pins: 10 RoHS Compliant: Yes |
|---|---|
| Category | Industrial & Scientific |
| MPN | FF650R17IE4 |
| UPC | 201546978888 |
| EAN | 201546978888 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | INFINEON |
IGBT Modules N-CH 1.7KV 930A
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 2.45 V Continuous Collector Current at 25 C: 930 A Gate-Emitter Leakage Current: 400 nA Power Dissipation: 4.15 kW Maximum Operating Temperature: + 150 C Package / Case: PRIME2 Brand: Infineon Technologies |
|---|---|
| Category | Industrial & Scientific |
| MPN | FF650R17IE4 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |