FF650R17IE4D_B2 INFINEON Infineon Technologies Corporation - Jotrin Electronics
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| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| JT50-FF650R17IE4D_B2 | 1 | 80 | 1 | ||
| 1Source | FF650R17IE4D_B2 | 1 | 1 | ||
![]() Galco | FF650R17IE4D_B2 | 1 | 1 |
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INFINEON FF650R17IE4D_B2 IGBT Module
Brand: Infineon
Catalog
| Feature | Price For: Each Transistor Polarity: N Channel DC Collector Current: 650A Collector Emitter Voltage Vces: 1.7kV Power Dissipation Pd: 4.15kW Collector Emitter Voltage V(br)ceo: 1.7kV Operating Temperature Min: -40\xb0C No. of Pins: 10 RoHS Compliant: Yes |
|---|---|
| Category | Industrial & Scientific |
| MPN | FF650R17IE4D_B2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | INFINEON |
