Onsemi Igbt, Single, 1Kv, 50A, To-3P - FGA50N100BNTD2
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 57AC1889 | 1 | 1 | 1 @ $8.23 | |
| Digi-Key | 2051640 | 1 | 1 | ||
| 807-0757 | 1 | 1 | |||
| FGA50N100BNTD2-ND | 1 | 1 | |||
| Win Source | FGA50N100BNTD2 | 1 | 4560 | 1 | |
| Hotenda | H1848411 | 1 | 370 | 1 | 1 @ $7.04, 10 @ $6.36, 100 @ $5.27, 500 @ $4.58 |
| RS Online | 8070757 | 1 | 1 | 1 @ $2.86 | |
| 1Source | FGA50N100BNTD2 | 1 | 1 | ||
![]() Radwell | FGA50N100BNTD2 | 450 | -2 | 450 | 1 @ $6.91 |
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IGBT Transistors N-ch / 50A 1000V (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
IGBT Transistors N-ch / 50A 1000V (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
IGBT Transistors N-ch / 50A 1000V (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
IGBT Transistors N-ch / 50A 1000V (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
IGBT Transistors N-ch / 50A 1000V (1 piece)
Brand: Fairchild Semiconductor
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | FGA50N100BNTD2 |
| Label | Fairchild Semiconductor |
| Manufacturer | Fairchild Semiconductor |
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
IGBT Transistors N-ch / 50A 1000V
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube |
|---|---|
| Category | Industrial & Scientific |
| MPN | FGA50N100BNTD2 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
