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Onsemi Igbt, Single, 1Kv, 50A, To-3P - FGA50N100BNTD2

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Attributes

Brand name, Manufacturer nameONSEMI
ManufacturerONSEMI Fairchild Semiconductor
CategoryL1Semiconductors - Discretes
CategoryL2IGBTs
CategoryL3Single IGBTs
Extra Product NameOnsemi Igbt, Single, 1Kv, 50A, To-3P - FGA50N100BNTD2
jsonUrlDataSemiconductors - Discretes > IGBTs > Single IGBTs
moq, multiple, tierMinQty11
MPN, Part Number, PartNumberFGA50N100BNTD2
qtyInStock0
SKU57AC1889
tierPrice18.23
urlhttps://www.newark.com/57AC1889?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
ASINB00M1GSO4K
AsinB00LUF1L0W B00LUF1LXE B00LUF1MV0 B00LUF1NMS B00M1GSO4K B00MEKV5QW
Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-FGA50N100BNTD2 MS 512-FGA50N100BNTD2 X1 MS 512-FGA50N100BNTD2 X10 MS 512-FGA50N100BNTD2 X100 MS 512-FGA50N100BNTD2 X5 MS 512-FGA50N100BNTD2 X50
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
FetchTime1535554532
Height75
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece
TitleIGBT Transistors N-ch / 50A 1000V IGBT Transistors N-ch / 50A 1000V (1 piece) IGBT Transistors N-ch / 50A 1000V (10 pieces) IGBT Transistors N-ch / 50A 1000V (100 pieces) IGBT Transistors N-ch / 50A 1000V (5 pieces) IGBT Transistors N-ch / 50A 1000V (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/31bOFzkHfLL._SL75_.jpg
Unitspixels
Width45

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark57AC1889111 @ $8.23
Digi-Key205164011
RS Delivers807-075711
Digi-KeyFGA50N100BNTD2-ND11
Win SourceFGA50N100BNTD2145601
HotendaH1848411137011 @ $7.04, 10 @ $6.36, 100 @ $5.27, 500 @ $4.58
RS Online8070757111 @ $2.86
1SourceFGA50N100BNTD211
RadwellFGA50N100BNTD2450-24501 @ $6.91

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IGBT Transistors N-ch / 50A 1000V (10 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
CategoryIndustrial & Scientific
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Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors N-ch / 50A 1000V (100 pieces)
Brand: Fairchild Semiconductor
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FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTD2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors N-ch / 50A 1000V (5 pieces)
Brand: Fairchild Semiconductor
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FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
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MPNFGA50N100BNTD2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
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FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
CategoryIndustrial & Scientific
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Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
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IGBT Transistors N-ch / 50A 1000V (1 piece)
Brand: Fairchild Semiconductor
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberFGA50N100BNTD2
LabelFairchild Semiconductor
ManufacturerFairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTD2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors N-ch / 50A 1000V
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 25 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3PN Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTD2
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)