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Onsemi Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var - FGA50N100BNTDTU

ONSEMI . FGA50N100BNTDTU

Attributes

Brand name, Manufacturer nameONSEMI
ManufacturerONSEMI Fairchild Semiconductor
CategoryL1Semiconductors - Discretes
CategoryL2More Semiconductors - Discretes
Extra Product NameOnsemi Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var - FGA50N100BNTDTU
jsonUrlDataSemiconductors - Discretes > More Semiconductors - Discretes
moq, multiple90
MPN, Part Number, PartNumberFGA50N100BNTDTU
qtyInStock, tierPrice10
SKU86K1436
tierMinQty11
urlhttps://www.newark.com/86K1436?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
ASINB00M1GSWR4
AsinB00LUF1PQC B00LUF1QHA B00LUF1R7E B00LUF1RTC B00M1GSWR4
Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-FGA50N100BNTDTU X1 MS 512-FGA50N100BNTDTU X10 MS 512-FGA50N100BNTDTU X100 MS 512-FGA50N100BNTDTU X5 MS 512-FGA50N100BNTDTU X50
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
FetchTime1535554472
Height, Width75
OldTitleIGBT Transistors 600V 4 0A UFD (1 piece)
ProductTypeNameELECTRONIC_COMPONENT
TitleIGBT Transistors 600V 4 0A UFD IGBT Transistors 600V 4 0A UFD (10 pieces) IGBT Transistors 600V 4 0A UFD (100 pieces) IGBT Transistors 600V 4 0A UFD (5 pieces) IGBT Transistors 600V 4 0A UFD (50 pieces)
TitleSourcelistings feed
URLhttp://ecx.images-amazon.com/images/I/1138WBJbnUL._SL75_.jpg
Unitspixels

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark86K143690901 @ $0.00
TMEFGA50N100BNTDTU11
RS Delivers807-0751P11
Digi-Key195434811
Digi-KeyFGA50N100BNTDTU-ND189011 @ $4.63, 10 @ $4.16, 100 @ $3.15, 500 @ $2.80, 1000 @ $2.39, 2000 @ $2.36
Win SourceFGA50N100BNTDTU1014941010 @ $5.37, 25 @ $4.03, 85 @ $3.63
HotendaH184853111
1SourceFGA50N100BNTDTU11
VericalFGA50N100BNTDTU30450450 @ $5.00
Rochester ElectronicsFGA50N100BNTDTU12981 @ $3.42, 25 @ $3.18, 100 @ $3.05, 500 @ $2.93, 1000 @ $2.78
Mouser512-FGA50N100BNTDTU4091 @ $4.62, 10 @ $3.93, 50 @ $3.86, 100 @ $3.40, 1000 @ $2.43, 10000 @ $2.24
AvnetFGA50N100BNTDTU1
RS Components8070751396
Ewing ComponentsFGA50N100BNTDTU39688

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IGBT Transistors 600V 4 0A UFD (10 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTDTU
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 4 0A UFD (100 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTDTU
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 4 0A UFD (5 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTDTU
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 4 0A UFD (50 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTDTU
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 4 0A UFD
Brand: Fairchild Semiconductor
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
Part numberFGA50N100BNTDTU
LabelFairchild Semiconductor
ManufacturerFairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1000 V Collector-Emitter Saturation Voltage: 2.5 V Maximum Gate Emitter Voltage: +/- 25 V Gate-Emitter Leakage Current: +/- 500 nA Power Dissipation: 156 W Maximum Operating Temperature: + 150 C Package / Case: TO-3P-3 Packaging: Tube
CategoryIndustrial & Scientific
MPNFGA50N100BNTDTU
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)