Infineon Igbt Module - FP35R12W2T4
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 84R7210 | 1 | 1 | 1 @ $0.00 | |
![]() Galco | FP35R12W2T4-EUPC | 10 | 10 | 1 @ $55.73 | |
| 1Source | FP35R12W2T4 | 1 | 1 | ||
![]() Radwell | FP35R12W2T4 | 1 | 2 | 1 | |
| Win Source | FP35R12W2T4 | 1 | 14 | 1 |
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FP35R12W2T4, Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-1 Tray (1 Items)
Brand: Infineon
IGBT Modules IGBT-MODULE
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: IGBT Modules RoHS: No Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Continuous Collector Current at 25 C: 54 A Maximum Operating Temperature: + 150 C Package / Case: EASY2B Brand: Infineon Technologies Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw |
|---|---|
| Category | Industrial & Scientific |
| MPN | FP35R12W2T4 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |

