Onsemi Mosfet, N-Ch, 600V, 7.5A, To-263 - FQB8N60CTM
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 60J0803 | 800 | 800 | 1 @ $0.00 | |
| Waldom | ON SEMICONDUCTOR FQB8N60CTM | 50 | 201 | 1 | 50 @ $1.03 |
| FQB8N60CTM | 1 | 1 | 1 @ $2.05, 5 @ $1.84, 25 @ $1.63, 100 @ $1.47, 800 @ $1.37 | ||
![]() Digi-Key | 13463969 | 1 | 1 | ||
| Digi-Key | 1056048 | 1 | 10 | 1 | 1 @ $2.52, 10 @ $2.27 |
| RS Delivers | 671-0924 | 1 | 1 | 1 @ $2.19 | |
| RS Delivers | 145-5520 | 800 | 800 | 800 @ $0.97, 1600 @ $0.93 | |
![]() swatee.com | FQB8N60CTM | 1 | 849 | 1 | 1 @ $2.46 |
| FQB8N60CTMFSCT-ND | 1 | 794 | 1 | 1 @ $1.74, 10 @ $1.56, 25 @ $1.47, 100 @ $1.15 | |
| Future Electronics | 2001756 | 800 | 800 | 800 | 800 @ $0.82, 1600 @ $0.67, 2400 @ $0.67, 3200 @ $0.66, 4000 @ $0.66 |
| Win Source | FQB8N60CTM | 1 | 19610 | 1 | |
| Hotenda | H1818169 | 1 | 1 | ||
| iodParts | FQB8N60CTM | 800 | 23200 | 800 | 800 @ $1.36, 1600 @ $1.32, 2400 @ $1.27 |
| 1Source | FQB8N60CTM | 1 | 1 |
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MOSFET 600V N-Channel Adv Q-FET C-Series (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 7.5 A Rds On - Drain-Source Resistance: 1.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 7.5 A Rds On - Drain-Source Resistance: 1.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 7.5 A Rds On - Drain-Source Resistance: 1.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 7.5 A Rds On - Drain-Source Resistance: 1.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel Adv Q-FET C-Series
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 7.5 A Rds On - Drain-Source Resistance: 1.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.13 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
FAIRCHILD (ON SEMICONDUCTOR) FQB8N60CTM N-Channel 600 V 7.5 A 1.2 ? Surface Mount QFET Mosfet - TO-263-800 item(s)
Brand: FAIRCHILD (ON SEMICONDUCTOR)
N-Channel 600 V 7.5 A 1.2 ? Surface Mount QFET Mosfet - TO-263 For more info refer to the specification sheet located in the 'Downloads' section below the image
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 600 V
- Drain-sourceOnResistance-Max: 1.2 ?
- QgGateCharge: 28 nC
- RatedPowerDissipation(P): 3.13 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | FQB8N60CTM |
| Part number | FQB8N60CTM |
| Items per pack | 800 |
| Label | FAIRCHILD (ON SEMICONDUCTOR) |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | FQB8N60CTM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
FQB8N60CTM, Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R (25 Items)
Brand: ON Semiconductor
FQB8N60CTM, Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) D2PAK T/R (25 items)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | FQB8N60CTM |
| Part number | FQB8N60CTM |
| Items per pack | 25 |
| Label | ON Semiconductor |
| Manufacturer | ON Semiconductor |

