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IPA50R280CE INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPA50R280CE

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Attributes

Brand name, Manufacturer nameInfineon Technologies Corporation
ManufacturerInfineon Technologies Corporation Infineon Technologies
Attribute00, Attribute06TO-220 FP
Attribute01MOSFET
Attribute02Green
Attribute03Obsoleted
Attribute045R280CE
Attribute05, qtyInStock16280
Attribute07Tube
Attribute0832.6 nC
Attribute0930 W
Attribute10CoolMOS
Attribute11IPA50R280CEXKSA1
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Life Cycle
AttributeKey04Marking Code
AttributeKey05In-stock
AttributeKey06Package / Case
AttributeKey07Packaging
AttributeKey08Gate Charge Qg
AttributeKey09Power Dissipation
AttributeKey10Tradename
AttributeKey11Part # Aliases
Extra Product NameIPA50R280CE INFINEON Transistors - Jotrin Electronics
keywordsIPA50R280CE,INFINEON,TO-220 FP,MOSFET,,Marking Code 5R280CEIPA50R280CE Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIPA50R280CE
SKUJT25-IPA50R280CE
snippetBuy IPA50R280CE INFINEON ,Marking Code: 5R280CE, Learn more about IPA50R280CE Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube, View the manufacturer, and stock, and datasheet pdf for the IPA50R280CE at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWO9N2Y B00LWO9Q3U B00LWO9THI B00LWO9WOI B00M2DO9DC
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPA50R280CE X1 MS 726-IPA50R280CE X10 MS 726-IPA50R280CE X100 MS 726-IPA50R280CE X5 MS 726-IPA50R280CE X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (1 piece) MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (10 pieces) MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (100 pieces) MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (5 pieces) MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IPA50R280CE1162801
americanmicrosemi.comIPA50R280CE11
Digi-Key346905711
Win SourceIPA50R280CE8744108787 @ $0.58, 205 @ $0.49, 772 @ $0.39
HotendaH184389111
1SourceIPA50R280CE11
Mouser726-IPA50R280CE2671 @ $1.15, 10 @ $0.98, 50 @ $0.98, 100 @ $0.76, 1000 @ $0.53, 10000 @ $0.45
Rochester ElectronicsIPA50R280CE4271 @ $0.63, 25 @ $0.59, 100 @ $0.56, 500 @ $0.54, 1000 @ $0.52
RutronikTMOSP1093412050 @ $0.60, 500 @ $0.59, 1500 @ $0.58, 2500 @ $0.57
RS Components8977501345
Avnet AsiaIPA50R280CE500500 @ $0.54, 1000 @ $0.50, 2000 @ $0.48, 3000 @ $0.46, 5000 @ $0.45
Ewing ComponentsIPA50R280CE12000
Abacus TechnologiesIPA50R280CE526

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MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPA50R280CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPA50R280CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPA50R280CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPA50R280CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 500V 280 RDS CoolMOS Superjunction MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 280 mOhms Configuration: Single Qg - Gate Charge: 32.6 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 30 W Mounting Style: Through Hole
CategoryIndustrial & Scientific
MPNIPA50R280CE
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)