Infineon IPA50R650CEXKSA1
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| swatee.com | IPA50R650CEXKSA1 | 1 | 227 | 1 | 1 @ $3.70 |
| 1Source | IPA50R650CEXKSA1 | 1 | 1 | ||
| Mouser | 726-IPA50R650CEXKSA1 | 475 | 1 @ $1.62, 10 @ $1.30, 50 @ $1.30, 100 @ $1.00, 1000 @ $0.70, 10000 @ $0.59 | ||
| Avnet Europe | SP000992086 | 1 | 1 @ $0.98, 282 @ $0.36, 1535 @ $0.33, 3325 @ $0.30, 8952 @ $0.28 |
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MOSFET COOL MOS (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 650 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R650CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 650 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R650CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 650 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R650CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 650 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R650CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 650 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 15 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R650CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |