IPA50R950CE INFINEON Transistors - Jotrin Electronics
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| JT25-IPA50R950CE | 1 | 3826 | 1 | ||
| 3469051 | 1 | 1309 | 1 | 771 @ $0.39 | |
| Hotenda | H1843890 | 1 | 1 | ||
| 1Source | IPA50R950CE | 1 | 1 | ||
| Chip One Stop Japan | C1S322000397543 | 5 | 25 | 5 @ $0.67, 10 @ $0.59 | |
| Rochester Electronics | IPA50R950CE | 1800 | 1 @ $0.34, 25 @ $0.32, 100 @ $0.31, 500 @ $0.29, 1000 @ $0.28 | ||
| Mouser | 726-IPA50R950CE | 83 | 1 @ $0.72, 10 @ $0.60, 50 @ $0.60, 100 @ $0.39, 1000 @ $0.31, 10000 @ $0.25 | ||
| Ewing Components | IPA50R950CE | 12000 | |||
| Abacus Technologies | IPA50R950CE | 2220 |
Related on Amazon
As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 26 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R950CE |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 26 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R950CE |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 26 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R950CE |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 500V 950 RDS CoolMOS Superjunction MOSFET (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 950 mOhms Configuration: Single Qg - Gate Charge: 10.5 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 26 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA50R950CE |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
IPA50R950CE, Trans MOSFET N-CH 500V 6.6A Automotive 3-Pin(3+Tab) TO-220FP Tube (25 Items)
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | IPA50R950CE |
| Part number | IPA50R950CE |
| Label | Infineon |
| Manufacturer | Infineon |