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Infineon Mosfet, N-Ch, 100V, 120A, To-263-3 - IPB027N10N3GATMA1

INFINEON . IPB027N10N3GATMA1

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Attributes

Brand name, Manufacturer name, ManINFINEON
Manufacturer, Label, Publisher, StudioINFINEON Infineon Technologies
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameInfineon Mosfet, N-Ch, 100V, 120A, To-263-3 - IPB027N10N3GATMA1
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, tierMinQty1, Item_package_quantity, PackageQuantity1
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberIPB027N10N3GATMA1
qtyInStock4501
SKU85X6013
tierPrice16.76
urlhttps://www.newark.com/85X6013?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASIN, AsinB0748LF1LS B07PRDCT9M
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
BrandInfineon Infineon Technologies
Bullet_pointChannelType: N-Ch Drain-sourceOnResistance-Max: 4.5 mΩRatedPowerDissipation(P): 300 W; QgGateCharge: 206 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 120 A; Turn-onTime-Nom(ton): 34 ns; Turn-offTime-Nom(toff): 84 ns; RiseTIme: 58 ns; FallTime: 28 n LowInputCapacitance: 11100 pF Noofchannels: 1 VoltageDraintoSource: 100 V
Case1000
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
Externally_assigned_product_identifier, Identifier7445413130167
FeatureChannelType: N-Ch
FetchTime1538249451 1581678042 1625814057 1636584158 1651821716 1666442340 1677760879 1681889609 1686324027 1689837172 1690019393 1714723003
Height150 243 56 75
IdentifierTypeEAN
IsBrandQueryTrue
ItemClassificationBASE_PRODUCT
ItemName, Item_name, TitleINFINEON IPB027N10N3GATMA1 Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK - 1000 item(s) IPB027N10N3GATMA1, Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R (5 Items)
Item_type_keywordelectronic-components mosfet-transistors
Item_weight0.01 2.04
Linkhttps://m.media-amazon.com/images/I/1148B8aHx5L._SL75_.jpg https://m.media-amazon.com/images/I/1148B8aHx5L.jpg https://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg https://m.media-amazon.com/images/I/218E+YhkL4L.jpg
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items1000 5
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionIPB027N10N3GATMA1, Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R (5 items) Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-06-30T16:30:45.893Z 2019-03-18T21:33:29.680Z
SkuINFINEON TECHNOLOGIES IPB027N10N3GATMA1 IPB027N10N3GATMA1
Supplier_declared_dg_hz_regulationunknown
Typeean
URLhttp://ecx.images-amazon.com/images/I/218E%2BYhkL4L._SL75_.jpg https://m.media-amazon.com/images/I/1148B8aHx5L._SL75_.jpg https://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg
Unitgrams ounces pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625 0.0044974301448
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark85X60131450111 @ $6.76
jotrin.comJT25-IPB027N10N3GATMA1150001
TMEIPB027N10N3GATMA1111 @ $4.56, 5 @ $4.27, 25 @ $3.96, 100 @ $3.81
Digi-Key208089011232711 @ $6.77, 10 @ $6.08, 100 @ $4.98, 500 @ $4.24, 1000 @ $3.58, 2000 @ $3.40
RS Delivers825-9235P11
AmazonSCB0748LF1LS11
Win SourceIPB027N10N3GATMA1116781
1SourceIPB027N10N3GATMA111
Future Electronics7060183100010001000 @ $3.08

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INFINEON IPB027N10N3GATMA1 Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK - 1000 item(s)
Brand: Infineon
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Ch
  • LowInputCapacitance: 11100 pF
  • Noofchannels: 1
  • VoltageDraintoSource: 100 V
  • Drain-sourceOnResistance-Max: 4.5 mΩRatedPowerDissipation(P): 300 W; QgGateCharge: 206 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 120 A; Turn-onTime-Nom(ton): 34 ns; Turn-offTime-Nom(toff): 84 ns; RiseTIme: 58 ns; FallTime: 28 n
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelIPB027N10N3GATMA1
Part numberIPB027N10N3GATMA1
Items per pack1000
LabelINFINEON
ManufacturerINFINEON
Catalog
FeatureChannelType: N-Ch
CategoryIndustrial & Scientific
MPNIPB027N10N3GATMA1
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerINFINEON
View on Amazon (paid link)
IPB027N10N3GATMA1, Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R (5 Items)
Brand: Infineon Technologies
IPB027N10N3GATMA1, Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R (5 items)
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelIPB027N10N3GATMA1
Part numberIPB027N10N3GATMA1
Items per pack5
LabelInfineon Technologies
ManufacturerInfineon Technologies
View on Amazon (paid link)