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IPB039N10N3 G INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPB039N10N3 G

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Attributes

Brand name, Manufacturer name, ManufacturerInfineon Technologies Corporation
Attribute00, Attribute08TO-263-7
Attribute01MOSFET
Attribute02Rohs
Attribute03, qtyInStock26800
Attribute043.9 mOhms
Attribute05Single Quint Source
Attribute06+ 175 C
Attribute07SMD/SMT
Attribute09Reel
Attribute1014 ns
Attribute11152 S, 76 S
Attribute1288 nC
Attribute13- 55 C
Attribute14214 W
Attribute1529 ns
Attribute161000
Attribute1748 ns
Attribute18IPB039N10N3GATMA1 IPB039N10N3GXT SP000482428
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Forward Transconductance gFS (Max / Min)
AttributeKey12Gate Charge Qg
AttributeKey13Minimum Operating Temperature
AttributeKey14Power Dissipation
AttributeKey15Rise Time
AttributeKey16Factory Pack Quantity
AttributeKey17Typical Turn Off Delay Time
AttributeKey18Part # Aliases
Extra Product NameIPB039N10N3 G INFINEON Transistors - Jotrin Electronics
keywordsIPB039N10N3 G,INFINEON,TO-263-7,MOSFET,IPB039N10N3 G Datasheet PDF
moq, multiple1
MPNIPB039N10N3 G
SKUJT25-IPB039N10N3 G
snippetBuy IPB039N10N3 G INFINEON , Learn more about IPB039N10N3 G N-Channel MOSFETs (20V…250V); Package: PG-TO263-7; Package: D2PAK 7pin (TO-263 7pin); VDS (max): 100.0 V; RDS (on) (max) (@10V): 3.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 160.0 A;, View the manufacturer, and stock, and datasheet pdf for the IPB039N10N3 G at Jotrin Electronics.

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