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IPB120N04S3-02 Infineon Technologies | Discrete Semiconductor Products | DigiKey

Infineon Technologies . IPB120N04S3-02

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute01, Brand, Label, Man, Publisher, StudioInfineon Technologies
Attribute00Discrete Semiconductor Products
Attribute02OptiMOS?
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05N-Channel
Attribute06MOSFET (Metal Oxide)
Attribute0740 V
Attribute08120A (Tc)
Attribute0910V
Attribute102mOhm @ 80A, 10V
Attribute114V @ 230?A
Attribute12210 nC @ 10 V
Attribute13?20V
Attribute1414300 pF @ 25 V
Attribute15-
Attribute16300W (Tc)
Attribute17-55?C ~ 175?C (TJ)
Attribute18Surface Mount
Attribute19PG-TO263-3
Attribute20TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Part Status
AttributeKey05FET Type
AttributeKey06Technology
AttributeKey07Drain to Source Voltage (Vdss)
AttributeKey08Current - Continuous Drain (Id) @ 25?C
AttributeKey09Drive Voltage (Max Rds On, Min Rds On)
AttributeKey10Rds On (Max) @ Id, Vgs
AttributeKey11Vgs(th) (Max) @ Id
AttributeKey12Gate Charge (Qg) (Max) @ Vgs
AttributeKey13Vgs (Max)
AttributeKey14Input Capacitance (Ciss) (Max) @ Vds
AttributeKey15FET Feature
AttributeKey16Power Dissipation (Max)
AttributeKey17Operating Temperature
AttributeKey18Mounting Type
AttributeKey19Supplier Device Package
AttributeKey20Package / Case
Extra Product NameIPB120N04S3-02 Infineon Technologies | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberIPB120N04S3-02
SKU2080927
AsinB00HKZECFC B00LWP85I6 B00LWP87N4 B00M2DJA3Q
Case, PackageQuantity1 10 5
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB120N04S3-02 X1 MS 726-IPB120N04S3-02 X10 MS 726-IPB120N04S3-02 X5
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 5 Piece
TitleMOSFET OPTIMOS-T POWER-TRAN 40V 120A (1 piece) MOSFET OPTIMOS-T POWER-TRAN 40V 120A (10 pieces) MOSFET OPTIMOS-T POWER-TRAN 40V 120A (5 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key208092711
Win SourceIPB120N04S3-02180001
HotendaH182196311
1SourceIPB120N04S3-0211

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MOSFET OPTIMOS-T POWER-TRAN 40V 120A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB120N04S3-02
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS-T POWER-TRAN 40V 120A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB120N04S3-02
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS-T POWER-TRAN 40V 120A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 2 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package / Case: D2PAK-2
CategoryIndustrial & Scientific
MPNIPB120N04S3-02
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)