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IPB60R125C6 INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPB60R125C6

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Attributes

Brand name, Manufacturer nameInfineon Technologies Corporation
ManufacturerInfineon Technologies Corporation Infineon Technologies
Attribute00, Attribute08TO-263-3
Attribute01MOSFET
Attribute02Green
Attribute036R125C6
Attribute04, qtyInStock25
Attribute05Single
Attribute06+ 150 C
Attribute07SMD/SMT
Attribute09Reel
Attribute107 nS
Attribute1196 nC
Attribute12- 55 C
Attribute13219 W
Attribute1412 nS
Attribute151000
Attribute1683 nS
Attribute17IPB60R125C6ATMA1 IPB60R125C6XT SP000687456
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Marking Code
AttributeKey04In-stock
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Gate Charge Qg
AttributeKey12Minimum Operating Temperature
AttributeKey13Power Dissipation
AttributeKey14Rise Time
AttributeKey15Factory Pack Quantity
AttributeKey16Typical Turn Off Delay Time
AttributeKey17Part # Aliases
Extra Product NameIPB60R125C6 INFINEON Transistors - Jotrin Electronics
keywordsIPB60R125C6,INFINEON,TO-263-3,MOSFET,,Marking Code 6R125C6IPB60R125C6 Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIPB60R125C6
SKUJT25-IPB60R125C6
snippetBuy IPB60R125C6 INFINEON ,Marking Code: 6R125C6, Learn more about IPB60R125C6 N-Channel MOSFETs (>500V?900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 125.0 mOhm; ID(max) @ TC=25°C: 30.0 A; IDpuls (max): 89.0 A;, View the manufacturer, and stock, and datasheet pdf for the IPB60R125C6 at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWO7SL2 B00LWO7VA0 B00LWO7Y7U B00LWO81F4 B00M2DNTCE
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB60R125C6 X1 MS 726-IPB60R125C6 X10 MS 726-IPB60R125C6 X100 MS 726-IPB60R125C6 X5 MS 726-IPB60R125C6 X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 600V CoolMOS C6 Power Transistor (1 piece) MOSFET 600V CoolMOS C6 Power Transistor (10 pieces) MOSFET 600V CoolMOS C6 Power Transistor (100 pieces) MOSFET 600V CoolMOS C6 Power Transistor (5 pieces) MOSFET 600V CoolMOS C6 Power Transistor (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IPB60R125C61251
RS Delivers898-690911
swatee.comIPB60R125C6146811 @ $11.51
Win SourceIPB60R125C618001
HotendaH1822460111 @ $2.36
1SourceIPB60R125C611
Digi-KeyIPB60R125C6CT-ND111 @ $5.06, 10 @ $4.55, 100 @ $3.73, 500 @ $3.17

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MOSFET 600V CoolMOS C6 Power Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R125C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R125C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R125C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R125C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 125 mOhms Configuration: Single Qg - Gate Charge: 96 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 219 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R125C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)