As an Amazon Associate, we earn from qualifying purchases.

IPB60R160C6 INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPB60R160C6

Gallery

Attributes

Brand name, Manufacturer nameInfineon Technologies Corporation
ManufacturerInfineon Technologies Corporation Infineon Technologies
Attribute00, Attribute08TO-263-3
Attribute01MOSFET
Attribute02Green
Attribute036R160C6
Attribute04, qtyInStock100000
Attribute05Single
Attribute06+ 150 C
Attribute07SMD/SMT
Attribute09Reel
Attribute108 nS
Attribute1175 nC
Attribute12- 55 C
Attribute13176 W
Attribute1413 nS
Attribute1596 nS
Attribute16IPB60R160C6ATMA1 IPB60R160C6XT SP000687552
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Marking Code
AttributeKey04In-stock
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Gate Charge Qg
AttributeKey12Minimum Operating Temperature
AttributeKey13Power Dissipation
AttributeKey14Rise Time
AttributeKey15Typical Turn Off Delay Time
AttributeKey16Part # Aliases
Extra Product NameIPB60R160C6 INFINEON Transistors - Jotrin Electronics
keywordsIPB60R160C6,INFINEON,TO-263-3,MOSFET,,Marking Code 6R160C6IPB60R160C6 Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIPB60R160C6
SKUJT25-IPB60R160C6
snippetBuy IPB60R160C6 INFINEON ,Marking Code: 6R160C6, Learn more about IPB60R160C6 N-Channel MOSFETs (>500V…900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 160.0 mOhm; ID(max) @ TC=25°C: 23.8 A; IDpuls (max): 70.0 A;, View the manufacturer, and stock, and datasheet pdf for the IPB60R160C6 at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWO8QSG B00LWO8TNS B00LWO8WK8 B00LWO8ZHI B00M2DOFK4
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPB60R160C6 X1 MS 726-IPB60R160C6 X10 MS 726-IPB60R160C6 X100 MS 726-IPB60R160C6 X5 MS 726-IPB60R160C6 X50
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 600V CoolMOS C6 Power Transistor (1 piece) MOSFET 600V CoolMOS C6 Power Transistor (10 pieces) MOSFET 600V CoolMOS C6 Power Transistor (100 pieces) MOSFET 600V CoolMOS C6 Power Transistor (5 pieces) MOSFET 600V CoolMOS C6 Power Transistor (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IPB60R160C611000001
Little DiodeIPB60R160C611
Win SourceIPB60R160C62011832020 @ $1.81, 50 @ $1.69, 150 @ $1.58
HotendaH1816492111 @ $1.72
1SourceIPB60R160C611
Digi-KeyIPB60R160C6CT-ND111 @ $3.49, 10 @ $3.14, 100 @ $2.57, 500 @ $2.19

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

MOSFET 600V CoolMOS C6 Power Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R160C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R160C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R160C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R160C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET 600V CoolMOS C6 Power Transistor (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 23.8 A Rds On - Drain-Source Resistance: 160 mOhms Configuration: Single Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 176 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNIPB60R160C6
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)