infineon . IPB60R600CP
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 33P7140 | 1 | 1 | ||
| JT25-IPB60R600CP | 1 | 100000 | 1 | ||
![]() Digi-Key | 12129051 | 1 | 5970 | 1 | 433 @ $0.69 |
![]() Radwell | IPB60R600CP | 1 | 1 | ||
| Win Source | IPB60R600CP | 1 | 32500 | 1 | |
| Hotenda | H1843549 | 1 | 1 | ||
| 1Source | IPB60R600CP | 1 | 1 |
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MOSFET COOL MOS PWR TRANS MAX 650V (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB60R600CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS MAX 650V (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB60R600CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS MAX 650V (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB60R600CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS MAX 650V (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB60R600CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
IPB60R600CP
Brand: Infineon
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPB60R600CP |
| Label | Infineon |
| Manufacturer | Infineon |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 6.1 A Rds On - Drain-Source Resistance: 600 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPB60R600CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |

